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首页> 外文期刊>Japanese journal of applied physics >Anisotropic electrical conductivity of surface-roughened semipolar (11(2)over-bar2) GaN films by photochemical etching
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Anisotropic electrical conductivity of surface-roughened semipolar (11(2)over-bar2) GaN films by photochemical etching

机译：通过光化学蚀刻对表面粗糙化的半极性（11（2）over-bar2）GaN薄膜进行各向异性导电

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摘要

We studied the anisotropy of electrical conductivity in surface-roughened semipolar (11 (2) over bar2) GaN (s-GaN) films. Highly crystalline s-GaN films were obtained using asymmetric lateral epitaxy on oxide-patterned m-plane sapphire substrates. The in-plane structural anisotropy of the s-GaN films was confirmed by anisotropic peak broadening in X-ray rocking curves (XRC) with the in-beam orientations. The XRC full-width at half maximum (FWHM) values were measured to be 454 and 615 arcsec along the [(11 (2) over bar3)](GaN) and [1 (1) over bar 00](GaN) directions, respectively. The s-GaN surface was roughened using photo-chemical etching, and the electrical anisotropy was then investigated as a function of azimuth angles with the transmission line method. The Ohmic contact properties on the roughened s-GaN surface did not depend on the azimuth angle or annealing temperatures between 750 and 950 degrees C. The sheet resistances parallel to the [1 (1) over bar 00](GaN) direction on roughened s-GaN were found to be approximately half of the resistance parallel to the [11 (2) over bar3](GaN) direction, showing that anisotropic electrical conductivity is maintained for surface-roughened s-GaN due to charged carrier scattering induced by basal-plane stacking faults. (C) 2017 The Japan Society of Applied Physics
机译：我们研究了在bar2）GaN（s-GaN）膜上表面粗糙的半极性（11（2））上电导率的各向异性。使用不对称的横向外延在氧化物图案的m面蓝宝石衬底上获得了高度结晶的s-GaN膜。 s-GaN膜的面内结构各向异性是通过具有沿束内方向的X射线摇摆曲线（XRC）的各向异性峰展宽来证实的。沿着[（bar3）上方（11（2））]（GaN）和[bar 00]（GaN）上方[1（1））的XRC半高全宽（FWHM）值分别为454和615 arcsec，分别。使用光化学蚀刻对s-GaN表面进行粗糙化处理，然后使用传输线方法研究电各向异性与方位角的关系。粗糙化的s-GaN表面上的欧姆接触特性不取决于方位角或750到950摄氏度之间的退火温度。粗糙化的s上平行于[1（1）over bar bar]（GaN）方向的薄层电阻发现-GaN大约是在bar3]（GaN）方向上平行于[11（2）的电阻的一半），这表明由于基底-引起的带电载流子散射，表面粗糙化的s-GaN保持了各向异性的导电性平面堆叠故障。 （C）2017日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2017年第5期|051001.1-051001.4|共4页
  • 作者

    Jang Soohwan; Lee Sohyun; Baik Kwang Hyeon;

  • 作者单位

    Dankook Univ, Dept Chem Engn, Yongin 16890, Gyeonggi, South Korea;

    Dankook Univ, Dept Chem Engn, Yongin 16890, Gyeonggi, South Korea;

    Hongik Univ, Sch Mat Sci & Engn, Jochiwon 30016, Sejong, South Korea;

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