...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Waveguide loss reduction of lateral-current-injection type GaInAsP/InP membrane Fabry-Perot laser
【24h】

Waveguide loss reduction of lateral-current-injection type GaInAsP/InP membrane Fabry-Perot laser

机译：侧向注入型GaInAsP / InP膜法布里-珀罗激光器的波导损耗减小

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We investigated the waveguide loss of lateral-current-injection (LCI) type GaInAsP/InP membrane Fabry-Perot lasers by adopting low-doped p-InP cap and side cladding layers. An internal quantum efficiency of 75% was obtained, and waveguide loss was reduced to 22 cm(-1), which was approximately half of that in our previous report. Further, a differential quantum efficiency higher than 50% was obtained for devices with cavity length less than 400 mu m. These results indicate the possibility of sub-mA threshold current and high-efficiency operation of LCI type membrane distributed feedback and distributed-reflector lasers with active region length less than 100 mu m. (C) 2017 The Japan Society of Applied Physics.
机译：我们通过采用低掺杂的p-InP盖和侧包层研究了侧向注入（LCI）型GaInAsP / InP膜Fabry-Perot激光器的波导损耗。内部量子效率为75％，波导损耗降至22 cm（-1），约为我们先前报告的一半。此外，对于腔长度小于400μm的器件，获得了高于50％的差分量子效率。这些结果表明，有源区长度小于100μm的LCI型膜分布反馈和分布反射激光器具有亚mA阈值电流和高效工作的可能性。 （C）2017年日本应用物理学会。

著录项

  • 来源
    《Japanese journal of applied physics》 |2017年第5期|050311.1-050311.4|共4页
  • 作者

    Tomiyasu Takahiro; Hiratani Takuo; Inoue Daisuke; Nakamura Nagisa; Amemiya Tomohiro; Nishiyama Nobuhiko; Arai Shigehisa;

  • 作者单位

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan|Tokyo Inst Technol, Inst Innovat Res, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan|Tokyo Inst Technol, Inst Innovat Res, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan|Tokyo Inst Technol, Inst Innovat Res, Meguro Ku, Tokyo 1528552, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号