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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Thermoelectric properties of gallium-doped p-type germanium
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Thermoelectric properties of gallium-doped p-type germanium

机译：掺杂镓的p型锗的热电性能

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摘要

In this study, the temperature-dependent thermoelectric properties of p-type single-crystal Ge, which is a useful material for thermoelectric applications owing to its significantly high carrier mobility, were investigated. The thermoelectric properties of Ga-doped (5.7 X 10(16), 3.4 X 10(18), and 1.0 X 10(19)cm(-3)) p-type single-crystal Ge were measured from room temperature to 770 K. The sample with a carrier concentration of 1.0 X 10(19)cm(-3) showed the highest thermoelectric figure of merit, ZT, over the entire measured temperature range. The maximum ZT value was 0.06 at 650 K. A theoretical model based on the Boltzmann transport equation with relaxation-time approximation was developed and quantitatively reproduced the experimentally observed data. The optimal impurity concentration predicted by this model was 3 X 10(19)cm(-3) at 300K and increased with temperature. (C) 2016 The Japan Society of Applied Physics
机译：在这项研究中，研究了p型单晶Ge的随温度变化的热电性质，由于其高的载流子迁移率，该型热电应用是有用的材料。在室温至770 K的范围内测量了掺Ga（5.7 X 10（16），3.4 X 10（18）和1.0 X 10（19）cm（-3））p型单晶Ge的热电性能。载流子浓度为1.0 X 10（19）cm（-3）的样品在整个测量温度范围内均显示出最高的热电品质因数ZT。 ZT最大值在650 K时为0.06。建立了基于玻尔兹曼输运方程的弛豫时间近似的理论模型，并定量地再现了实验观察到的数据。该模型预测的最佳杂质浓度在300K时为3 X 10（19）cm（-3），并随温度的升高而增加。 （C）2016年日本应用物理学会

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    Ohishi Yuji; Takarada Sho; Aikebaier Yusufu; Muta Hiroaki; Kurosaki Ken; Yamanaka Shinsuke; Miyazaki Yoshinobu; Uchida Noriyuki; Tada Tetsuya;

  • 作者单位

    Osaka Univ, Grad Sch Engn, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, 2-2 Yamadaoka, Suita, Osaka 5650871, Japan|Univ Fukui, Res Inst Nucl Engn, Tsuruga, Fukui 9140055, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058562, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058562, Japan;

    Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058562, Japan;

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