Direct growth of multilayer graphene by precipitation using W capping layer

Yamada Jumpei; Ueda Yuki; Maruyama Takahiro; Naritsuka Shigeya

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Direct growth of multilayer graphene by precipitation using W capping layer

机译：使用W覆盖层通过沉淀直接生长多层石墨烯

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In this study, the direct growth of multilayer graphene from amorphous carbon on a sapphire (0001) substrate by precipitation using a nickel catalyst layer and a tungsten capping layer was examined. The findings revealed that a tungsten carbide layer was formed on top of the catalyst, and this suppressed the diffusion of carbon atoms upwards towards the surface. This caused the graphene layer to precipitate below the catalyst layer rather than above it. Under optimized growth conditions, Raman spectroscopy indicated that a high-quality graphene layer was formed with a low D/G peak intensity ratio of 0.10. (C) 2016 The Japan Society of Applied Physics

机译：在这项研究中，研究了使用镍催化剂层和钨覆盖层通过沉淀在蓝宝石（0001）衬底上从无定形碳直接生长多层石墨烯。该发现表明在催化剂的顶部上形成了碳化钨层，这抑制了碳原子向上向表面的扩散。这导致石墨烯层沉淀在催化剂层下方而不是其上方。在最佳生长条件下，拉曼光谱表明形成了高质量的石墨烯层，其D / G峰强度比低至0.10。（C）2016年日本应用物理学会

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《Japanese journal of applied physics》 |2016年第10期|100302.1-100302.4|共4页
作者
Yamada Jumpei; Ueda Yuki; Maruyama Takahiro; Naritsuka Shigeya;
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Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Dept Appl Chem, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan;

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Direct growth of multilayer graphene by precipitation using W capping layer

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