Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes

Nagase Masanori; Takahashi Tokio; Shimizu Mitsuaki

首页> 外文期刊>Japanese journal of applied physics >Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes

【24h】

Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes

机译：利用GaN / AlN共振隧穿二极管的电流-电压特性中的双稳态进行电阻切换存储操作

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Resistance switching memory operations using the bistability in the current-voltage (I-V) characteristics of GaN/AlN resonant tunneling diodes (RTDs) were investigated to realize an ultrafast nonvolatile memory operating at a picosecond time scale. Resistance switching memory operations based on electron accumulation due to intersubband transitions and electron release due to tunneling current were demonstrated with high reproducibility at room temperature when the leakage of electrons accumulating in the quantum well from the deep level in the AlN barrier was suppressed. A nonvolatile memory for the processor core in a normally off computing system is expected to be realized using the bistability in the I-V characteristics of GaN/AlN RTDs. (C) 2016 The Japan Society of Applied Physics

机译：研究了利用GaN / AlN共振隧穿二极管（RTD）的电流-电压（I-V）特性中的双稳性进行的电阻切换存储器操作，以实现以皮秒级为单位的超快非易失性存储器。当抑制从AlN势垒的深层中累积在量子阱中的电子泄漏时，在室温下具有较高的重现性，证明了基于子带间跃迁引起的电子积累和隧道电流引起的电子释放的电阻切换存储操作。期望使用GaN / AlN RTD的I-V特性中的双稳态来实现常关计算系统中用于处理器内核的非易失性存储器。（C）2016年日本应用物理学会

著录项

来源
《Japanese journal of applied physics》 |2016年第10期|100301.1-100301.4|共4页
作者
Nagase Masanori; Takahashi Tokio; Shimizu Mitsuaki;
展开▼
作者单位

Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan;

Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan;

Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory [J] . Masanori Nagase, Tokio Takahashi, Mitsuaki Shimizu Japanese journal of applied physics . 2015,第3期

机译：研究用于超快非易失性存储器的GaN / AlN共振隧穿二极管的双稳态特性
2. Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well [J] . Nagase M., Tokizaki T. IEEE Transactions on Electron Devices . 2014,第5期

机译：子阱内带间跃迁和电子积累引起的GaN / AlN共振隧穿二极管的双稳态特性
3. Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity [J] . Nagase Masanori, Takahashi Tokio, Shimizu Mitsuaki Japanese journal of applied physics . 2018,第7期

机译：通过减少结构不均匀性，使用GaN / AlN谐振隧穿二极管来稳定非易失性存储操作
4. Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy [C] . Kikuchi, A., Bannai, . 2002

机译：RF-等离子体辅助分子束外延生长的AlN / GaN双势垒共振隧穿二极管的室温负差分电阻
5. Modeling the effects of many valley electron scattering on the current-voltage characteristics of resonant tunneling diodes. [D] . Kia, Arash Kojouri. 1994

机译：模拟许多谷电子散射对谐振隧穿二极管的电流-电压特性的影响。
6. Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode [O] . Haitao Tian, Lu Wang, Zhenwu Shi, 2012

机译：自组装InAs岛对光开关谐振隧穿二极管界面粗糙度的影响
7. N-polar GaN/AlN resonant tunneling diodes [O] . YongJin Cho, Jimy Encomendero, Shao-Ting Ho, 2020

机译：N极GaN / ALN谐振隧道二极管

Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes

摘要

著录项

相似文献

相关主题

期刊订阅