Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity

Sato Daiki; Nishitani Tomohiro; Honda Yoshio; Amano Hiroshi

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Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity

机译：具有负电子亲和力的InGaN光电阴极的表面电荷极限弛豫时间的观察

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A thin p-type InGaN with a negative electron affinity (NEA) surface was used to measure the relaxation time of a surface charge limit (SCL) by irradiating rectangular laser beam pulses at changing time interval. The p-type InGaN film was grown by metal organic vapor phase epitaxy and the NEA activation was performed after the sample was heat cleaned. 13 nC per pulse with 10ms width was obtained from the InGaN photocathode. The current decreased exponentially from the beginning of the pulse. The initial current value after the laser irradiation decreased with the time interval. As a result, the SCL relaxation time was estimated through the InGaN photocathode measurements at 100 ms. (C) 2016 The Japan Society of Applied Physics

机译：通过以变化的时间间隔照射矩形激光束脉冲，使用具有负电子亲和力（NEA）表面的薄p型InGaN来测量表面电荷极限（SCL）的弛豫时间。通过金属有机气相外延生长p型InGaN膜，并在热清洗样品后进行NEA活化。从InGaN光电阴极获得每个脉冲13 nC，宽度为10ms。电流从脉冲开始呈指数下降。激光照射后的初始电流值随时间间隔减小。结果，通过InGaN光电阴极测量在100ms处估计了SCL弛豫时间。（C）2016年日本应用物理学会

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《Japanese journal of applied physics》 |2016年第5s期|05FH05.1-05FH05.4|共4页
作者
Sato Daiki; Nishitani Tomohiro; Honda Yoshio; Amano Hiroshi;
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Nagoya Univ, Dept Elect Engn, Nagoya, Aichi 4648603, Japan;

Nagoya Univ, Synchrotron Radiat Res Ctr, Nagoya, Aichi 4648603, Japan;

Nagoya Univ, Ctr Integrated Res Future Elect, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan;

Nagoya Univ, Ctr Integrated Res Future Elect, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan;

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机译：勘误表：“负电子亲和性GaAs光电阴极的蒙特卡洛电荷传输和光发射” [J.应用物理113,104904（2013）]
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4. Surface cleaning for negative electron affinity GaN photocathode [C] . Jianliang Qiao, Yingpeng Yin, Youtang Gao, International Symposium on Advanced Optical Manufacturing and Testing Technologies . 2012

机译：表面清洁负电子亲和GaN PhotoCathode
5. Indium phosphide negative electron affinity photocathodes: Surface cleaning and activation. [D] . Sun, Yun. 2003

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6. Conducting polymers as electron glasses: surface charge domains and slow relaxation [O] . Miguel Ortuño, Elisa Escasain, Elena Lopez-Elvira, -1

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Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity

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