...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN
【24h】

Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

机译：r面蓝宝石衬底表面预处理对a面AlN晶体质量的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Single-crystal a-plane AlN (11 (2) over bar0) films were grown on r-plane sapphire (1 (1) over bar 02) substrates by hydride vapor phase epitaxy (HVPE). We performed the optimization of thermal cleaning and nitridation conditions for r-plane sapphire substrates, and investigated the effect of ammonia (NH3) preflow on the crystallinity of a-plane AlN. An r-plane sapphire substrate with uniformly straight atomic steps was formed at 1000 degrees C, and NH3 preflow was subsequently supplied. The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the NH3 preflow time. The crystallinity of a-plane AlN films was improved by varying the NH3 preflow time from 30 to 90 s. The optimum crystal quality of a-plane AlN films was obtained with NH3 preflow for 30 s. (C) 2016 The Japan Society of Applied Physics
机译：通过氢化物气相外延（HVPE），在r面蓝宝石（bar 02上方的1（1））衬底上生长单晶a平面AlN（bar0上方的11（2））薄膜。我们对r面蓝宝石衬底进行了热清洗和氮化条件的优化，并研究了氨（NH3）预流对a面AlN结晶度的影响。在1000摄氏度下形成具有均匀笔直原子台阶的r面蓝宝石衬底，然后提供NH3预流。通过r面蓝宝石衬底的氮化，a面AlN的生长模式被提升为三维（3D）生长，并且通过改变NH3预流时间来修改3D岛的尺寸。通过将NH3预流时间从30 s更改为90 s，可以改善a面AlN膜的结晶度。通过NH3预流30 s，可以获得a平面AlN膜的最佳晶体质量。 （C）2016年日本应用物理学会

著录项

  • 来源
    《Japanese journal of applied physics》 |2016年第5s期|05FA12.1-05FA12.5|共5页
  • 作者

    Lin Chia-Hung; Yasui Daiki; Tamaki Shinya; Miyake Hideto; Hiramatsu Kazumasa;

  • 作者单位

    Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan;

    Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan;

    Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan;

    Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan|Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, Japan;

    Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号