GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction

Osumi Junya; Ishihara Koji; Yamamoto Taiji; Iwaya Motoaki; Takeuchi Tetsuya; Kamiyama Satoshi; Akasaki Isamu

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GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction

机译：原位X射线衍射表征GaN阻挡层对GaInN / GaN超晶格中临界厚度的依赖性对GaN

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We investigated the critical thickness dependence on the GaN barrier layer thickness in a GaInN/GaN superlattice (SL). The characterization was done by combining an in situ X-ray diffraction (XRD) system attached to a metalorganic vapor phase epitaxy rector and ex situ analyses such as scanning electron microscopy and transmission electron microscopy. The critical thickness required for the introduction of a + c-type misfit dislocations (MDs) in the GaInN/GaN SL was determined by analyzing the full width at half maximum of the in situ XRD spectrum from a GaInN/GaN SL as a function of SL periods, and we successfully found the critical thicknesses of specific different SLs. (C) 2016 The Japan Society of Applied Physics

机译：我们研究了在GaInN / GaN超晶格（SL）中GaN势垒层厚度对临界厚度的依赖性。通过结合附接到金属有机气相外延整流器的原位X射线衍射（XRD）系统和非原位分析（如扫描电子显微镜和透射电子显微镜）进行表征。在GaInN / GaN SL中引入+ c型失配位错（MDs）所需的临界厚度是通过分析GaInN / GaN SL的原位XRD光谱的半峰全宽来确定的，该半宽是GaInN / GaN SL的函数。 SL时期，我们成功找到了特定不同SL的临界厚度。（C）2016年日本应用物理学会

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《Japanese journal of applied physics》 |2016年第5s期|05FD11.1-05FD11.4|共4页
作者
Osumi Junya; Ishihara Koji; Yamamoto Taiji; Iwaya Motoaki; Takeuchi Tetsuya; Kamiyama Satoshi; Akasaki Isamu;
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Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan;

Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan|Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan;

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1. Characterizing the thickness dependence of epitaxial GaN grown over GaN nanocolumns using X-ray diffraction [J] . Wen-Yu Shiao, Tsung-Yi Tang, Yung-Sheng Chen, Journal of Crystal Growth . 2008,第13期

机译：使用X射线衍射表征在GaN纳米柱上生长的外延GaN的厚度依赖性
2. In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth [J] . Taiji Yamamoto, Daisuke Iida, Yasunari Kondo, Journal of Crystal Growth . 2014,第maya1期

机译：有机金属气相外延生长过程中GaInN / GaN超晶格的原位X射线衍射监测
3. Deformation of AlGaN/GaN Superlattice Layers According to X-ray Diffraction Data [J] . R. N. Kyutt, M. P. Shcheglov, V. Yu. Davydov, Physics of the solid state . 2004,第2期

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4. Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness [C] . S. Khandelwal, S. Ghosh, S. A. Ahsan, 2017 IEEE Asia Pacific Microwave Conference . 2017

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5. GaInN/GaN Schottky Barrier Solar Cells. [D] . Chern, Kevin T. 2015

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7. In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN [O] . Tomohiro Yamaguchi, Takuo Sasaki, Seiji Fujikawa, 2019

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GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction

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