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首页> 外文期刊>Japanese journal of applied physics >Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes
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Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes

机译：（0001）和（11（2）over-bar2）InGaN基发光二极管的比较研究

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We have systematicallytic investigatedd the dopdoping of Si with hd Mg by met or organic vapour p ase epi axy for Iight mhting do de (LEs). By Si doping of GaN we reached electron concentrations close to 102 cm(-3), but the topography degrades above mid 10(19) cm(-3) By Mg doping we reached hole concentrations close to 5 x 1017cm(-3), using Mg partial pressures about 3)9 higher than those for (0001), Exceeding the maximum Mg partial pressure led to a quick degmdation of the sample. Low resistivities as well as high hole concentrations required a growth temperature of 900 degrees C or higher. At optimised conditions the electrical properties as wet as the photoluminescence of (1122) p-GaN were similar to (0001) p-GaN. The best ohmic p-contacts were achieved by NiAg metallisation. A single quantum well LED emitting at 465 nm was realised on (0001) and (1122).. Droop (sub-linear increase of the light output power) occurred at much higher current densities on (11 - 22) Howeveb the light output of the (0001) LED was higher than that of (11 (2) over bar2) until deep in the droop regime. Our LEDs as wet as those in the literature indicate a reduction in efficiency from (0001) over semi-polar to non -polar orientations. We proloose that reduced fields open a loss channel for carriers. (C) 2016 The Japan Societ of Applied Phsics
机译：我们已经系统地研究了由金属或有机蒸气相epi xy掺杂硅与高密度镁对硅的掺杂。通过GaN的Si掺杂，我们达到了接近102 cm（-3）的电子浓度，但是形貌在10（19）cm（-3）中部以上退化了。通过Mg掺杂，我们达到了接近5 x 1017cm（-3）的空穴浓度，如果使用的Mg分压比（0001）的Mg分压高约3）9，则超过最大Mg分压会导致样品快速脱胶。低电阻率以及高空穴浓度需要900摄氏度或更高的生长温度。在最佳条件下，与（1122）p-GaN的光致发光一样湿的电性能类似于（0001）p-GaN。最好的欧姆p接触是通过NiAg金属化获得的。在（0001）和（1122）上实现了一个以465 nm发射的单量子阱LED。在（11-22）Howeveb上，在更高的电流密度下出现了下垂（光输出功率的亚线性增加）。 （0001）的LED高于bar11的（11（2））直到下垂状态。我们的LED像文献中一样潮湿，表明在半极性和非极性方向上的效率从（0001）降低。我们提出减少的领域为运营商开辟了亏损渠道。 （C）2016年日本应用物理学会

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