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首页> 外文期刊>Japanese journal of applied physics >Comparison of subthreshold swing in SrTiO3-based all-solid-state electric-double-layer transistors with Li4SiO4 or Y-stabilized-ZrO2 solid electrolyte
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Comparison of subthreshold swing in SrTiO3-based all-solid-state electric-double-layer transistors with Li4SiO4 or Y-stabilized-ZrO2 solid electrolyte

机译：具有Li4SiO4或Y稳定的ZrO2固体电解质的SrTiO3基全固态双电层晶体管的亚阈值摆幅比较

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摘要

SrTiO3 (STO)-based all-solid-state electric-double-layer transistors (EDLTs) with a Li4SiO4 (LSO) lithium ion conductor (i.e., electrolyte) or Y-stabilized-ZrO2 (YSZ) proton conductor were fabricated. While the LSO device showed significant drain current enhancement at room temperature, the YSZ device needed high temperature to achieve comparable drain current enhancement due to the difference in ionic conductivity between the two electrolytes. Subthreshold swing (S), which is a parameter used to evaluate the steepness of drain current enhancement in field-effect transistors (FETs), was calculated to be 66 and 227mV/dec, respectively, for LSO and YSZ EDLTs. The 66mV/dec is very close to the theoretical limit (60mV/dec) for conventional FETs, indicating that LSO is more suitable for STO-based EDLTs and that the type of solid electrolyte used greatly affects EDLT switching characteristics. (C) 2016 The Japan Society of Applied Physics
机译：制作了具有Li4SiO4（LSO）锂离子导体（即电解质）或Y稳定ZrO2（YSZ）质子导体的SrTiO3（STO）基全固态双电层晶体管（EDLT）。尽管LSO器件在室温下显示出显着的漏极电流增强，但由于两种电解质之间离子电导率的差异，YSZ器件需要高温才能达到可比的漏极电流增强。亚阈值摆幅（S）是用于评估场效应晶体管（FET）中漏极电流增强陡度的参数，对于LSO和YSZ EDLT，分别计算为66mV / dec和227mV / dec。 66mV / dec非常接近常规FET的理论极限（60mV / dec），这表明LSO更适合基于STO的EDLT，并且所使用的固体电解质类型会极大地影响EDLT开关特性。 （C）2016年日本应用物理学会

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    《Japanese journal of applied physics》 |2016年第6s1期|06GJ03.1-06GJ03.4|共4页
  • 作者

    Tsuchiya Takashi; Ochi Masanori; Higuchi Tohru; Terabe Kazuya;

  • 作者单位

    Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitechton WPI MANA, Tsukuba, Ibaraki 3050044, Japan|Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Tokyo 1258585, Japan;

    Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Tokyo 1258585, Japan;

    Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Tokyo 1258585, Japan;

    Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitechton WPI MANA, Tsukuba, Ibaraki 3050044, Japan;

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