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首页> 外文期刊>Japanese journal of applied physics >Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique
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Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique

机译：绝缘体上硅横向高压器件的分析模型，采用了横向厚度技术的变化

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摘要

Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective lateral voltage-sustaining technology. However, no analytical model has been reported for exploring the physical mechanism quantitatively. By solving the two-dimensional (2D) Poisson equation, an analytical model for a silicon-on-insulator (SOI) device with a VLT structure is proposed in this paper to optimize the surface potential and electric field distribution of the VLT SOI device. The lateral and vertical breakdown voltages are formulized to quantify the breakdown characteristic. The drift doping concentration range is derived to maximize the breakdown voltage. This model is used to investigate the electric field distribution and breakdown voltage of the VLT SOI device with various parameters. The validity of the proposed model is verified by the fair agreement between the analytical and numerical results.
机译：近来，已经提出了改变横向厚度（VLT）技术作为有效的横向电压维持技术。但是，尚无用于定量研究物理机理的分析模型的报道。通过求解二维（2D）泊松方程，提出了具有VLT结构的绝缘体上硅（SOI）器件的分析模型，以优化VLT SOI器件的表面电势和电场分布。公式化了横向和纵向击穿电压，以量化击穿特性。得出漂移掺杂浓度范围以使击穿电压最大。该模型用于研究具有各种参数的VLT SOI器件的电场分布和击穿电压。通过分析和数值结果之间的公平协议，验证了所提模型的有效性。

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  • 来源
    《Japanese journal of applied physics》 |2015年第2期|024301.1-024301.6|共6页
  • 作者

    Jiafei Yao; Yufeng Guo; Man Li; Xiaofeng Huang; Hong Lin; Xincun Ji; Yue Xu;

  • 作者单位

    College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;

    College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

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