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首页> 外文期刊>Japanese journal of applied physics >Fabrication of L-shaped Fe_4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field
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Fabrication of L-shaped Fe_4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field

机译：L形Fe_4N铁磁细线的制作及磁场对磁畴壁的位置控制

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摘要

We grow a 15-nm-thick ferromagnetic Fe_4N epitaxial film on a SrTiO_3(001) substrate by molecular beam epitaxy, and process it Into approximately 0.5-μm-wide and 24-μm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl_2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe_4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe_4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe_4N having a negative spin polarization.
机译：通过分子束外延在SrTiO_3（001）衬底上生长15nm厚的铁磁Fe_4N外延膜，并通过电子束将其加工成约0.5μm宽和24μm长的L形铁磁窄线。光刻和Cl_2反应离子刻蚀。它们的纵向方向平行于易磁化轴Fe_4N [100]和[010]。通过在平行于Fe_4N [100]或[010]的方向上施加外部磁场，可以在角的上侧或下侧控制畴壁的位置。该实验是在具有负自旋极化的Fe_4N中实现电流驱动畴壁运动的初步步骤。

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  • 来源
    《Japanese journal of applied physics》 |2015年第2期|028003.1-028003.3|共3页
  • 作者

    Toshiki Gushi; Keita Ito; Syuta Honda; Yoko Yasutomi; Kaoru Toko; Hirotaka Oosato; Yoshimasa Sugimoto; Kiyoshi Asakawa; Norio Ota; Takashi Suemasu;

  • 作者单位

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan,Japan Society for the Promotion of Science (JSPS), Chiyoda, Tokyo 102-0083, Japan,Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan,Tsukuba Nanotechnology Human Resource Development Program, Graduate School of Pure and Applied Sciences,University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

    NIMS Nanofabrication Platform, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;

    NIMS Nanofabrication Platform, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;

    Tsukuba Nanotechnology Human Resource Development Program, Graduate School of Pure and Applied Sciences,University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan;

    Tsukuba Nanotechnology Human Resource Development Program, Graduate School of Pure and Applied Sciences,University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

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