Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

Matsuura Hideharu

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Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

机译：模拟使用单个高压源操作的1.5毫米厚，直径15厘米门控硅漂移X射线探测器的仿真

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High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm(2), respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm(2) at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high. (c) 2015 The Japan Society of Applied Physics

机译：需要具有大有效面积的高分辨率硅X射线检测器，以通过测量从这些元素放射出的X射线荧光光子的能量和数量来有效地检测食物和土壤中的有害元素的痕迹。商业硅漂移检测器（SDD）的厚度和面积分别达到0.5 mm和1.5 cm（2）。我们描述了1.5毫米厚的门控SDD（GSDD），它可以检测能量高达50 keV的光子。我们在单个高反向偏压下模拟了Si厚度为1.5 mm，面积为0.18至168 cm（2）的GSDDs中的电势分布。可以通过将所有栅极宽度增加相同倍数来简单地扩大GSDD的面积，并且GSDD的电容保持较小，其X射线计数率仍然很高。（c）2015年日本应用物理学会

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《Japanese journal of applied physics》 |2015年第4期|044301.1-044301.5|共5页
作者
Matsuura Hideharu;
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Osaka Electrocommun Univ, Dept Elect & Elect Engn, Neyagawa, Osaka 5728530, Japan;

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1. Simulation of Thick Gated Silicon Drift X-ray Detector Operated by a Single High-Voltage Source [J] . Hideharu Matsuura Japanese journal of applied physics . 2013,第2期

机译：单个高压源操作的厚门控硅漂移X射线探测器的仿真
2. Development of a portable x-ray fluorescence spectrometer equipped with two monochromatic x-ray sources and silicon drift detector and field analysis of Islamic glasses at an excavation site in Egypt [J] . Nakai I, Yamada S, Terada Y, X-Ray Spectrometry: An International Journal . 2005,第1期

机译：便携式X射线荧光光谱仪的开发，该光谱仪配备两个单色X射线源和硅漂移检测器，并在埃及的一个挖掘现场对伊斯兰眼镜进行现场分析
3. Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy [J] . Zhang W.C., Li Z. IEEE Transactions on Nuclear Science . 2000,第4期

机译：用于X射线光谱学的大面积硅漂移探测器和探测器阵列的设计，仿真和测试
4. Possibility of gated silicon drift detector detecting hard X-ray [C] . Hideharu Matsuura, Shinya Fukushima, Shungo Sakurai, Conference on hard x-ray, gamma-ray, and neutron detector physics . 2015

机译：门控硅漂移检测器检测硬X射线的可能性
5. Design, fabrication, and characterization of tungsten/silicon germanium/silicon raised single source/drains for sub-100nm CMOS and sub-70nm fully self-aligned double-gated CMOS [D] . Gan, Dong 2000

机译：低于100nm CMOS和低于70nm完全自对准双栅极CMOS的钨/硅锗/硅凸起单源/漏极的设计，制造和表征
6. Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer [O] . Hideharu Matsuura, Shungo Sakurai, Yuya Oda, 2015

机译：用低成本硅片制造的门控硅漂移检测器
7. Simulation and Fabrication of Gated Silicon Drift X-Ray Detector Operated by Peltier Cooling [O] . Hideharu Matsuura, Derek Hullinger, Keith W. Decker 2013

机译：珀耳帖冷却操作的涂层硅漂移X射线检测器的仿真和制造

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

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