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首页> 外文期刊>Japanese journal of applied physics >Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer
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Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer

机译：包含SiO2 / Si3N4界面过渡层的p沟道氧化硅-氮化物-氧化物-硅存储器件中电荷俘获特性的表征

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摘要

The role of SiO2/Si3N4 interfacial transition (IFT) layer in the oxide-nitride-oxide (ONO) tri-layer is quantitatively analyzed for the first time by simulating the temperature and stress-accelerated retention characteristics of p-channel silicon-oxide-nitride-oxide-silicon (SONOS) devices. The ONO tri-layer is modeled as an alloy-dielectric by changing the atomic concentration of silicon, oxygen and nitrogen. It is revealed that simulated results including the IFT layer are more consistent with the experimental data than those neglecting the IFT layer. In addition, the results show that the trapped charge density in IFT layer is two times larger than in the bulk Si3N4 film, due to the oxygen atoms penetrated from SiO2 cause the extrinsic defects in the IFT layer. The energy levels of the trapped charge are continuously distributed, and the peak value is similar to 1.6 eV below the conduction band of the ONO tri-layer with a full width at half maximum of 0.45 eV. (c) 2015 The Japan Society of Applied Physics
机译：SiO2 / Si3N4界面转变（IFT）层在氧化物-氮化物-氧化物（ONO）三层中的作用是首次通过模拟p通道氧化硅的温度和应力加速保留特性进行了定量分析氮氧化物硅（SONOS）器件。通过改变硅，氧和氮的原子浓度，将ONO三层建模为合金电介质。结果表明，与忽略IFT层的结果相比，包括IFT层的模拟结果与实验数据更加吻合。此外，结果表明，IFT层中的捕获电荷密度是Si3N4体膜中的两倍，这是由于从SiO2渗透的氧原子导致了IFT层中的非本征缺陷。被俘获电荷的能级是连续分布的，其峰值类似于ONO三层导带以下的1.6 eV，其半峰全宽为0.45 eV。 （c）2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第10期|104201.1-104201.6|共6页
  • 作者

    Chiu Yung-Yueh; Yang Bo-Jun; Li Fu-Hai; Chang Ru-Wei; Sun Wein-Town; Lo Chun-Yuan; Hsu Chia-Jung; Kuo Chao-Wei; Shirota Riichiro;

  • 作者单位

    Natl Chiao Tung Univ, Elect & Comp Engn, Hsinchu 300, Taiwan;

    Natl Chiao Tung Univ, Elect & Comp Engn, Hsinchu 300, Taiwan;

    Natl Chiao Tung Univ, Elect & Comp Engn, Hsinchu 300, Taiwan;

    Natl Chiao Tung Univ, Elect & Comp Engn, Hsinchu 300, Taiwan;

    eMemory Technol Inc, SONOS Technol Res Program, Hsinchu 300, Taiwan;

    eMemory Technol Inc, SONOS Technol Res Program, Hsinchu 300, Taiwan;

    eMemory Technol Inc, SONOS Technol Res Program, Hsinchu 300, Taiwan;

    eMemory Technol Inc, SONOS Technol Res Program, Hsinchu 300, Taiwan;

    Natl Chiao Tung Univ, Elect & Comp Engn, Hsinchu 300, Taiwan;

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