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首页> 外文期刊>Japanese journal of applied physics >Self-organization of highly ordered honeycomb buckling patterns in crystalline thin films
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Self-organization of highly ordered honeycomb buckling patterns in crystalline thin films

机译：晶体薄膜中高度有序的蜂窝状屈曲图案的自组织

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摘要

Highly ordered honeycomb buckling patterns were self-organized by a simple annealing process. The patterns were formed by thin, layered crystalline films of Al4C3 and carbon synthesized on a sapphire c-plane substrate by chemical vapor deposition. While annealing at 1000 degrees C, the thin bilayer film wrinkled and began to develop a two-dimensionally periodic pattern. Two patterns, with periodicities of 34 and 20 mu m, were observed by two-dimensional fast Fourier transform (2D-FFT) analysis. Both patterns showed clear and sharp peaks at six orientations, corresponding to the vertices of a regular hexagon, similarly to the crystallinity of sapphire. Additionally, a shift of the Raman peak to a lower frequency was observed after annealing. These results reveal that the self-organization of a periodic buckling pattern is possible without complicated conventional lithography through the use of crystalline materials. Thus, the highly periodic hexagonal patterns obtained with thin crystal materials have a high symmetry, as characterized from 2D-FFT, and can be applied as an optical grating. (c) 2015 The Japan Society of Applied Physics
机译：通过简单的退火过程可以自组织高度有序的蜂窝屈曲模式。图案是通过在化学气相沉积蓝宝石c面基板上合成的Al4C3和碳的薄层晶体膜形成的。在1000℃下退火时，双层薄膜起皱并开始形成二维周期性图案。通过二维快速傅里叶变换（2D-FFT）分析，观察到了两种周期分别为34和20μm的模式。两种图案在六个方向上均显示清晰且尖锐的峰，对应于规则六边形的顶点，类似于蓝宝石的结晶度。另外，退火后观察到拉曼峰向较低的频率移动。这些结果表明，通过使用晶体材料，无需复杂的常规光刻，就可以实现周期性屈曲图案的自组织。因此，由薄晶体材料获得的高度周期性的六边形图案具有如2D-FFT所表征的高对称性，并且可以用作光栅。 （c）2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第10期|105502.1-105502.5|共5页
  • 作者

    Choi Yun Jeong; Naoi Yoshiki; Tomita Takuro;

  • 作者单位

    Univ Tokushima, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan;

    Univ Tokushima, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan|Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan;

    Univ Tokushima, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan|Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan;

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