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首页> 外文期刊>Japanese journal of applied physics >Enhancement of thermoelectric properties of CoSb3 skutterudite by addition of Ga and In
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Enhancement of thermoelectric properties of CoSb3 skutterudite by addition of Ga and In

机译：通过添加Ga和In提高CoSb3方钴矿的热电性能

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摘要

Filled skutterudites are known as excellent thermoelectric (TE) materials. The voids in the structure of skutterudites such as cobalt antimonide (CoSb3) can be filled or partially filled with a variety of different atoms. In the present study, we tried to fill both gallium (Ga) and indium (In) into the voids of CoSb3. The polycrystalline samples with nominal compositions of Ga0.2InxCo4Sb12 (x = 0.15, 0.20, 0.25, and 0.30) were prepared and their TE properties were examined from room temperature to 773 K. Ga and In added to CoSb3 partly filled the voids and most of the residual precipitated as nanoparticles at the grain boundaries. A tiny amount of Ga substituted for Sb at the Sb site of CoSb3, while it was more likely for In to fill the voids than Ga. All the samples exhibited negative values for the Seebeck coefficient. The lattice thermal conductivity was reduced effectively by the co-addition of Ga and In without degrading the power factor. The maximum dimensionless figure of merit (ZT) value of 0.95 at 725K was obtained for the sample with the nominal composition Ga0.2In0.3Co4Sb12. (C) 2015 The Japan Society of Applied Physics
机译：填充方钴矿被称为出色的热电（TE）材料。方钴矿（例如锑化钴（CoSb3））的结构中的空隙可以填充或部分填充各种不同的原子。在本研究中，我们试图将镓（Ga）和铟（In）都填充到CoSb3的空隙中。制备了标称成分为Ga0.2InxCo4Sb12（x = 0.15、0.20、0.25和0.30）的多晶样品，并在室温至773 K范围内检查了它们的TE特性。Ga和In被部分填充到CoSb3中，大部分填充了空隙残余物以纳米颗粒的形式在晶界处沉淀。在CoSb3的Sb位点上有少量的Ga代替Sb，而In则比Ga填充空隙的可能性更大。所有样品的塞贝克系数均为负值。通过Ga和In的共添加有效地降低了晶格热导率而不降低功率因数。对于标称成分为Ga0.2In0.3Co4Sb12的样品，在725K下获得的最大无量纲品质因数（ZT）值为0.95。 （C）2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第11期|111801.1-111801.5|共5页
  • 作者

    Choi Seongho; Kurosaki Ken; Harnwunggmoung Adul; Miyazaki Yoshinobu; Ohishi Yuji; Muta Hiroaki; Yamanaka Shinsuke;

  • 作者单位

    Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan;

    Rajamangala Univ Technol, Fac Sci & Technol, Thermoelect & Nanotechnol Res Ctr, Suvarnabhumi 11000, Thailand;

    Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan;

    Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan|Univ Fukui, Res Inst Nucl Engn, Tsuruga, Fukui 9140055, Japan;

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