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机译:嵌入线栅偏振器的基于GaInN的发光二极管
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea;
Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.;
Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.;
Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.;
机译:嵌入亚波长铝线栅偏振器的GaInN发光二极管的偏振光发射
机译:嵌入亚波长铝线栅偏振器的GalnN发光二极管的偏振光发射
机译:偏振白色发光二极管的极化转换用丝网偏振器
机译:非极性基于GalnN的发光二极管:一种用于波长稳定和偏振光发射器的方法
机译:极化匹配的基于GaInN的发光二极管的效率和载流子传输
机译:使用银纳米颗粒嵌入的ZnO薄膜增强InGaN / GaN发光二极管的光提取效率
机译:具有溅射ALN缓冲层的增强基于GAINN的绿色发光二极管的装置性能