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首页> 外文期刊>Japanese journal of applied physics >Difference in etching between Si(111) and (001) surfaces induced by atomic hydrogen irradiation observed by noncontact atomic force microscopy
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Difference in etching between Si(111) and (001) surfaces induced by atomic hydrogen irradiation observed by noncontact atomic force microscopy

机译：非接触原子力显微镜观察到的原子氢辐照引起的Si（111）和（001）表面蚀刻差异

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摘要

The surfaces of Si(001) and Si(111) treated in a hydrogen fluoride solution were observed by noncontact atomic force microscopy (nc-AFM) under successive irradiation with atomic H generated using a hot W filament as a H-2 cracker. The observation and irradiation were repeated in a vacuum chamber equipped with an nc-AFM system and the cracker. We found that etch pits formed on the (001) surface with increasing atomic H irradiation time, but not on the (111) surface. From the nc-AFM observation, we evaluated the average rates of etch-pit enlargement in depth and radius on the (001) surface. The rate in depth was higher than that in radius. The formation of deep etch pits was possibly attributed to the evolution of facets vertical to the (001) surface as the side walls of the pits. The water contact angles on the surfaces were measured, which increased with atomic H irradiation, indicating that the irradiation reinforces the H termination of the surfaces. (C) 2015 The Japan Society of Applied Physics
机译：在连续氟化物辐照下，用非接触原子力显微镜（nc-AFM）观察在氟化氢溶液中处理过的Si（001）和Si（111）的表面，并使用热的W灯丝作为H-2裂化剂产生原子H。在配备有nc-AFM系统和裂解器的真空室中重复观察和照射。我们发现，随着原子氢辐照时间的增加，在（001）表面上形成的腐蚀坑，而在（111）表面上却没有。从nc-AFM观察，我们评估了（001）表面上的深度和半径上的蚀坑扩大的平均速率。深度的比率高于半径的比率。深蚀刻凹坑的形成可能归因于垂直于（001）表面作为凹坑侧壁的刻面的演变。测量了表面上的水接触角，该接触角随着原子H辐射的增加而增加，表明该辐射增强了表面的H终止。 （C）2015年日本应用物理学会

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    《Japanese journal of applied physics》 |2015年第8s2期|08LB08.1-08LB08.5|共5页
  • 作者

    Miyagi Tomoaki; Sasahara Akira; Tomitori Masahiko;

  • 作者单位

    Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan;

    Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan;

    Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan;

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