Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion

Masashi Suezawa; Naoki Fukata; Yoshiaki Iijima; Ichiro Yonenaga

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Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion

机译：通过检测点缺陷和氢的复合物确定的高纯度Si晶体中空位和间隙的形成和迁移能：自扩散活化能的评估

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Experimental studies to determine the formation energies of vacancies in Si and Ge crystals have been performed since the 1950s, but have been unsuccessful. We studied the formation and migration energies of a vacancy and an interstitial by detecting complexes of point defects and hydrogen atoms by optical absorption measurement. The formation energies of the vacancy and interstitial were found to be 3.85 ± 0.15 and 4.8 + 0.6/-0.4 eV, respectively. The migration energies of the vacancy and interstitial were 0.45 ± 0.04 and 0.49 ± 0.05 eV, respectively. Using these energies, we determined the activation energies of the vacancy- and interstitial-mediated self-diffusion to be 4.30 ± 0.19 and 5.3 + 0.6/ -0.4 eV, respectively. The former energy is especially important since there has been no study in which vacancy-mediated diffusion has been successfully determined.

机译：自1950年代以来，已经进行了确定硅和锗晶体中空位形成能的实验研究，但没有成功。我们通过光吸收法检测点缺陷和氢原子的络合物，研究了空位和间隙的形成和迁移能。发现空位和间隙的形成能分别为3.85±0.15和4.8 + 0.6 / -0.4eV。空位和间隙的迁移能分别为0.45±0.04和0.49±0.05 eV。利用这些能量，我们确定了空位和间质介导的自我扩散的活化能分别为4.30±0.19和5.3 + 0.6 / -0.4 eV。前一种能量尤为重要，因为还没有成功确定空位介导的扩散的研究。

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《Japanese journal of applied physics》 |2014年第9期|091302.1-091302.7|共7页
作者
Masashi Suezawa; Naoki Fukata; Yoshiaki Iijima; Ichiro Yonenaga;
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Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;

Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan;

Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;

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Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion

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