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首页> 外文期刊>Japanese journal of applied physics >F_2-laser-induced microanostructuring and surface modification of iron thin film to realize hydrophobic and corrosion resistant
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F_2-laser-induced microanostructuring and surface modification of iron thin film to realize hydrophobic and corrosion resistant

机译：F_2激光诱导的铁薄膜的微观/纳米结构和表面改性，以实现疏水性和耐腐蚀性

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摘要

Nanoswellings of 60 nm height and 500 nm diameter on average of an iron thin film deposited on a silica glass substrate at regular intervals of 2.5 μm were fabricated by the irradiation of a 157 nm F_2 laser. The F_2 laser was focused on the iron thin film by each microsphere made of silica glass of 2.5 μm diameter, which covered the entire surface of the films. The surface of the silica glass substrate underneath the F_2-laser-irradiated iron thin film selectively swelled to push up the film. After the laser-induced microanostructuring, the F_2 laser was again irradiated onto the entire surface of the periodic microanostructured iron thin film to form an approximately 2-nm-thick Fe_3O_4 modified layer. As a result, the samples showed hydrophobicity and high corrosion resistance to 3 wt% NaCl aqueous solution (quasi-seawater). No rust was observed on the samples after the immersion test in the quasi-seawater for 24 h.
机译：通过157nm F_2激光的照射，以2.5μm的规则间隔沉积在二氧化硅玻璃基板上的铁薄膜的平均高度为60nm，直径为500nm的纳米溶胀。 F_2激光通过直径2.5μm的石英玻璃制成的每个微球聚焦在铁薄膜上，该微球覆盖了整个薄膜表面。 F_2激光辐照的铁薄膜下方的石英玻璃基板表面选择性溶胀以向上推动该薄膜。在激光诱导的微/纳米结构化之后，再次将F_2激光照射到周期性的微/纳米结构化铁薄膜的整个表面上，以形成约2nm厚的Fe_3O_4改性层。结果，样品显示出对3wt％的NaCl水溶液（准海水）的疏水性和高耐腐蚀性。在准海水中浸泡24小时后，在样品上未观察到生锈。

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  • 来源
    《Japanese journal of applied physics》 |2014年第11期|112701.1-112701.5|共5页
  • 作者

    Masayuki Okoshi; Yuta Awaihara; Tsugito Yamashita; Narumi Inoue;

  • 作者单位

    Department of Electrical and Electronic Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;

    Department of Electrical and Electronic Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;

    Department of Science and Engineering, Kanto Gakuin University, Yokohama 236-8501, Japan;

    Department of Electrical and Electronic Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;

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