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首页> 外文期刊>Japanese journal of applied physics >Influence of atomic oxygen irradiation during deposition on crystallization of post-annealed barium zirconate thin films
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Influence of atomic oxygen irradiation during deposition on crystallization of post-annealed barium zirconate thin films

机译：沉积过程中原子氧辐照对后退火锆酸钡薄膜薄膜结晶的影响

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摘要

The role of atomic oxygen irradiation in the epitaxial crystallization of yttrium-doped barium zirconate thin films fabricated by pulsed laser deposition (PLD) was investigated. X-ray diffraction and transmission electron microscopy revealed that, for films deposited without irradiation, random nudeation and growth occurred below the onset temperature for continuous crystallization at the film-interlayer interface. In contrast, for films deposited with oxygen irradiation, random nucleation and growth was not detected at the temperature of continuous crystallization, which facilitates epitaxial crystallization in these films. This study suggests the combined low temperature deposition with atomic oxygen irradiation and post-annealing could control microstructure of solid-state electrochemical devices such as solid oxide fuel cells and solid-state lithium secondary batteries.
机译：研究了原子氧辐照在通过脉冲激光沉积（PLD）制备的掺钇锆酸钡钡薄膜的外延结晶中的作用。 X射线衍射和透射电子显微镜显示，对于在没有辐射的情况下沉积的膜，在膜-层间界面处连续结晶的起始温度以下发生随机的裸露和生长。相反，对于用氧辐照沉积的膜，在连续结晶的温度下未检测到随机成核和生长，这促进了这些膜中的外延结晶。这项研究表明，将低温沉积与原子氧辐射和后退火相结合，可以控制固态电化学装置的微观结构，例如固态氧化物燃料电池和固态锂二次电池。

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  • 来源
    《Japanese journal of applied physics》 |2014年第11期|115503.1-115503.5|共5页
  • 作者

    Fumitada Iguchi; Yoshikazu Shibata; Takamichi Miyazaki; Noriko Sata; Hiroo Yugami;

  • 作者单位

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Institute of Technical Thermodynamics, German Aerospace Center (DLR), Pfaffenwaldring 38-40, 70569 Stuttgart, Germany;

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

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