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首页> 外文期刊>Japanese journal of applied physics >Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs
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Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs

机译：声声子变形势和表面粗糙度散射的增加对超尺度Si-MOSFET中准弹道传输的影响

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摘要

It is a common view that ballistic transport is enhanced by channel length scaling because of a decreased scattering number. On the other hand, the acoustic phonon (AP) scattering rate is higher in silicon-on-insulator (SOI) MOSFETs than in bulk Si-MOSFETs; moreover, surface roughness (SR) scattering caused by spatial fluctuation of quantized subbands emerges in extremely scaled SOI channels. Therefore, the influences of these scattering mechanisms on ballistic transport in ultrathin-body Si-MOSFETs are examined in this paper using a Monte Carlo simulation technique. First of all, the effect of increased AP scattering rate on the drain current and ballistic efficiency is found to be negligible. Furthermore, contrary to the common view, ballistic transport in double-gate MOSFETs is shown to be degraded when the channel length decreases to less than 10 nm, mainly owing to SR scattering intensified by the spatial fluctuation of quantized subbands. The gate and drain bias voltage dependencies of ballistic efficiency are also discussed.
机译：普遍的看法是，由于减少了散射数，通道长度缩放可增强弹道运输。另一方面，绝缘体上硅（SOI）MOSFET中的声子（AP）散射速率高于块状Si-MOSFET；此外，在极大规模的SOI通道中会出现由量化子带的空间波动引起的表面粗糙度（SR）散射。因此，本文使用蒙特卡罗模拟技术研究了这些散射机制对超薄体Si-MOSFET中弹道传输的影响。首先，发现增加的AP散射速率对漏极电流和弹道效率的影响可以忽略不计。此外，与一般观点相反，当沟道长度减小到小于10 nm时，双栅极MOSFET中的弹道传输性能会下降，这主要是由于量化子带的空间波动会导致SR散射加剧。还讨论了弹道效率对栅极和漏极偏置电压的依赖性。

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  • 来源
    《Japanese journal of applied physics》 |2014年第11期|114301.1-114301.8|共8页
  • 作者

    Shunsuke Koba; Ryoma Ishida; Yuko Kubota; Hideaki Tsuchiya; Yoshinari Kamakura; Nobuya Mori; Matsuto Ogawa;

  • 作者单位

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan;

    Department of Electrical Engineering, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan, Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan, Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan, Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan;

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