Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

Tomasz Sochacki; Mikolaj Amilusik; Boleslaw Lucznik; Michal Fijalkowski; Janusz Ludwik Weyher; Bohdan Sadovyi; Grzegorz Kamler; Grzegorz Nowak; Elzbieta Litwin-Staszewska; Aleksander Khachapuridze; Izabella Grzegory; Robert Kucharski; Marcin Zajac; Roman Doradzinski; Michal Bockowski

首页> 外文期刊>Japanese journal of applied physics >Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

【24h】

Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

机译：在氨热GaN种子上由氢化物气相外延结晶的GaN层制备自支撑GaN衬底

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is overviewed. Morphology of the crystal growing surface at the beginning of the crystallization process and at the end of it is presented. Based on these results a rough growth model is proposed. Smooth GaN layers up to 1 mm thick and of a high purity, excellent crystalline quality, without any cracks, and with a low dislocation density are grown. Preparation of the free-standing HVPE-GaN crystals by slicing as well as structural, electrical and optical qualities of the resulting wafers are reported and discussed.

机译：概述了氢化物气相外延（HVPE）在单热生长的GaN籽晶上的GaN结晶。介绍了结晶过程开始时和结束时晶体生长表面的形态。基于这些结果，提出了一个粗略的增长模型。生长出厚度高达1 mm的高纯度，优异的结晶质量，无任何裂纹且位错密度低的光滑GaN层。报告并讨论了通过切片制备自立式HVPE-GaN晶体以及所得晶片的结构，电学和光学质量。

著录项

来源
《Japanese journal of applied physics》 |2014年第5s1期|05FA04.1-05FA04.5|共5页
作者
Tomasz Sochacki; Mikolaj Amilusik; Boleslaw Lucznik; Michal Fijalkowski; Janusz Ludwik Weyher; Bohdan Sadovyi; Grzegorz Kamler; Grzegorz Nowak; Elzbieta Litwin-Staszewska; Aleksander Khachapuridze; Izabella Grzegory; Robert Kucharski; Marcin Zajac; Roman Doradzinski; Michal Bockowski;
展开▼
作者单位

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Sp. z o.o. Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Sp. z o.o. Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Sp. z o.o. Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;

Ammono S.A. Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

Ammono S.A. Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

Ammono S.A. Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Sp. z o.o. Sokolowska 29/37, 01-142 Warsaw, Poland;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds [J] . Tomasz Sochacki, Zachary Bryan, Mikolaj Amilusik, _Applied Physics Express . 2013,第7期

机译：在氨热生长的GaN晶种上由氢化物气相外延结晶的厚GaN层制备自支撑GaN衬底
2. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds [J] . Iwinska Malgorzata, Piotrzkowski Ryszard, Litwin-Staszewska Elzbieta, Applied physics express . 2017,第1期

机译：在单热结晶GaN晶种上生长的高电阻C掺杂氢化物气相外延GaN
3. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method [J] . Kazunobu Kojima, Yusuke Tsukada, Erika Furukawa, Applied physics express . 2015,第9期

机译：通过氢化物气相外延在氨热法合成的GaN籽晶上生长的具有低点缺陷浓度的低电阻率m面独立式GaN衬底
4. Study of free-standing GaN substrates prepared by hydride vapor phase epitaxy technology [C] . Tsung Yu Chen, Cheng-Ta Kuo, Chi-Ling Lee, . 2003

机译：氢化物气相外延技术制备的自支撑GaN衬底的研究
5. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth [D] . Kawagy, Alaa 2019

机译：用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
6. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy [O] . Tongbo Wei, Jiankun Yang, Yang Wei, -1

机译：交叉堆叠的碳纳米管通过氢化物气相外延辅助了自支撑式GaN衬底的自分离
7. Characterization of free-standing hydride vapor phase epitaxy GaN [O] . Jasinski, J., Swider, W., Liliental-Weber, Z., 2001

机译：自支撑氢化物气相外延GaN的表征

Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

摘要

著录项

相似文献

相关主题

期刊订阅