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Structural and optical studies of pure and Ni-doped ZnO nanoparticles synthesized by simple solution combustion method

机译:简单固溶燃烧法合成纯镍掺杂ZnO纳米粒子的结构和光学研究

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摘要

In this paper, the structural and optical studies of pure and Ni-doped ZnO nanoparticles synthesized by the simple solution combustion method are reported. The structural, morphological, and optical studies are carried out by powder X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), high resolution-transmission electron microscopy (HR-TEM), Raman, ultraviolet-visible (UV-vis) absorption, and photoluminescence (PL) spectra. The XRD pattern indicates that the prepared particles are in hexagonal wurtzite structure with the average crystalline size is around 30-60 nm. The elemental analyses of pure and doped samples are evaluated by energy dispersive X-ray spectrometry (EDX). Raman spectra of the pure and Ni-doped samples show remarkable effect on the polar as well as non-polar branches. Room temperature PL shows the near band edge related emission and the results are related to several intrinsic defects in the Ni-doped ZnO nanoparticles. Especially the oxygen vacancies are responsible for the long life time of the carriers.
机译:本文报道了通过简单溶液燃烧法合成的纯镍掺杂ZnO纳米粒子的结构和光学研究。通过粉末X射线衍射(XRD),场发射扫描电子显微镜(FE-SEM),高分辨率透射电子显微镜(HR-TEM),拉曼光谱,紫外可见光谱进行结构,形态和光学研究(UV-vis)吸收和光致发光(PL)光谱。 XRD图谱表明,所制备的颗粒呈六方纤锌矿结构,平均晶体尺寸约为30-60nm。通过能量色散X射线光谱(EDX)评估纯净样品和掺杂样品的元素分析。纯样品和掺镍样品的拉曼光谱对极性和非极性分支显示出显着的影响。室温PL显示了近带边缘相关的发射,并且结果与Ni掺杂的ZnO纳米颗粒中的一些固有缺陷有关。尤其是氧空位导致了载体的长寿命。

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  • 来源
    《Japanese journal of applied physics》 |2014年第5s1期|05FB16.1-05FB16.7|共7页
  • 作者单位

    Centre for Photonics and Nanotechnology, Sona College of Technology, Salem 636 005, Tamil Nadu, India;

    Centre for Photonics and Nanotechnology, Sona College of Technology, Salem 636 005, Tamil Nadu, India,Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;

    Department of Electronics, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan;

    Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;

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