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首页> 外文期刊>Japanese journal of applied physics >Tunable photoluminescent properties of Eu-doped β-Ga_2O_3 phosphor thin films prepared via excimer laser-assisted metal organic decomposition
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Tunable photoluminescent properties of Eu-doped β-Ga_2O_3 phosphor thin films prepared via excimer laser-assisted metal organic decomposition

机译：准分子激光辅助金属有机分解制备的Eu掺杂β-Ga_2O_3荧光粉薄膜的可调光致发光性能

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摘要

A Ga_2O_3:Eu thin film was prepared via excimer laser-assisted metal organic decomposition (ELAMOD) using an ArF laser at RT, and the effects of temperature and laser fluence during irradiation on the photoluminescent (PL) properties were investigated. Direct irradiation of the precursor film comprising metal organic compounds was found to be effective for obtaining excellent PL properties. Moreover, as the laser fluence of the ArF laser used changed, the PL intensity ratio of the peaks at 511 and 614 nm accordingly changed. The color coordinates of the β-Ga_2O_3:Eu~(2+) thin films prepared by ELAMOD were x= 0.43 and y = 0.38. On the other hand, β-Ga_2O_3 films prepared via ELAMOD at fluences of 100 and 150 mJ/cm~2 exhibited a strong broad blue-green emission band with a peak wavelength of approximately 421 nm. The emission mechanism of the Ga_2O_3:Eu films prepared via ELAMOD was also investigated.
机译：在室温下使用ArF激光通过准分子激光辅助金属有机分解（ELAMOD）制备了Ga_2O_3：Eu薄膜，研究了辐照过程中温度和激光通量对光致发光（PL）性能的影响。发现直接辐射包含金属有机化合物的前体膜对于获得优异的PL性能是有效的。此外，随着所使用的ArF激光器的激光通量的变化，在511和614nm处的峰的PL强度比也相应地变化。通过ELAMOD制备的β-Ga_2O_3：Eu〜（2+）薄膜的色坐标为x = 0.43和y = 0.38。另一方面，经由ELAMOD以100和150mJ / cm 2的注量制备的β-Ga_2O_3膜表现出强的宽蓝绿色发射带，其峰值波长为约421nm。还研究了通过ELAMOD制备的Ga_2O_3：Eu薄膜的发射机理。

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  • 来源
    《Japanese journal of applied physics》 |2014年第5s1期|05FB14.1-05FB14.4|共4页
  • 作者

    Tetsuo Tsuchiya; Tomoya Matsuura; Kentaro Shinoda; Tomohiko Nakajima; Junji Akimoto; Yasushi Idemoto;

  • 作者单位

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan,Tokyo University of Science, Noda, Chiba 278-8510, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan;

    Tokyo University of Science, Noda, Chiba 278-8510, Japan;

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