...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Contact hole shrink by directed self-assembly: Process integration and stability monitored on 300 mm pilot line
【24h】

Contact hole shrink by directed self-assembly: Process integration and stability monitored on 300 mm pilot line

机译：通过定向自组装来缩小接触孔：在300 mm的先导线上监控过程集成和稳定性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The semiconductor devices dimensions continue to shrink to keep up with the ITRS roadmap. Due to delay and extensive cost of EUV for 14 nm technology node and beyond, the directed self assembly (DSA) process has great potential for extending optical lithography, and enables to reduce the critical dimension (CD) and pitch of the final feature. After the recent implementation of DSA processes in 300 mm clean room environment, it is now time to move to the forward maturity step and demonstrate process stability through time. This study investigates the potential of DSA for contact hole shrink patterning using poly(styrene-block-methyl methacrylate) (PS-b-PMMA) di-block copolymers to target contact holes CD down to 15 nm. Based on the 300 mm pilot line available at LETI, the DSA manufacturability is considered through different criteria to achieve high resolution and pattern density multiplication, at a low cost in fully 300 mm wafers production line. The DSA process flow performance based on grapho-epitaxy approach is controlled after each step to follow the thicknesses of random and BCP materials supplied by ARKEMA. Moreover, the natural period of block copolymers and CD uniformity on free surface are also measured and detectivity is evaluated after etch transfer by image treatment. The thermal budget of DSA of both random and block copolymers have been evaluated to define optimum conditions. The paper has shown that UV exposure prior to PMMA wet development improves PMMA degradation to enable complete removal by wet development in acetic acid. DSA process for contact hole shrink patterning has shown final contact holes with an average CD of 21 nm and intra-wafer CD uniformity of 1.1 nm with an open yield of more than 99.9%.
机译：半导体器件的尺寸不断缩小，以与ITRS路线图保持一致。由于14纳米技术节点及以后的EUV的延迟和昂贵的成本，定向自组装（DSA）工艺具有扩展光学光刻的巨大潜力，并能够减小关键尺寸（CD）和最终特征的间距。在300 mm无尘室环境中最近实施DSA流程之后，现在该转向正向成熟阶段，并逐步证明流程的稳定性。这项研究调查了使用聚（苯乙烯-嵌段-甲基丙烯酸甲酯）（PS-b-PMMA）二嵌段共聚物将接触孔收缩图案化的DSA潜力，以将接触孔CD降低至15 nm。基于LETI提供的300 mm试生产线，可以通过不同的标准来考虑DSA的可制造性，从而以低成本在完整的300 mm晶圆生产线中实现高分辨率和图案密度的倍增。在每个步骤之后，都要控制基于石墨外延法的DSA工艺流程性能，以遵循ARKEMA提供的无规和BCP材料的厚度。此外，还测量了嵌段共聚物的自然周期和自由表面上的CD均匀性，并在通过图像处理进行蚀刻转移后评估了检测能力。已评估了无规共聚物和嵌段共聚物的DSA的热收支，以定义最佳条件。该论文表明，在PMMA湿显影之前暴露于紫外线可以改善PMMA的降解，从而能够通过在乙酸中湿显影而完全去除。用于接触孔收缩构图的DSA工艺显示出最终接触孔的平均CD为21 nm，晶圆内CD均匀度为1.1 nm，开放产率超过99.9％。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号