...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution
【24h】

Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution

机译：准分子激光在氯化铝溶液中辐照4H-SiC的铝掺杂

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 × 10~(20) cm~(-3) near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 × 10~(11)cm~(-2). In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC.
机译：我们已经发现，通过将准分子激光照射到浸入氯化铝溶液中的4H-SiC来进行向4H-SiC中掺杂铝。铝以接近表面的1×10〜（20）cm〜（-3）的浓度引入SiC，而氯几乎不扩散到4H-SiC中。在氯化铝溶液中进行激光辐照后，激光辐照区的电阻随激光通量的增加而降低。霍尔效应测量表明，激光辐照产生p型层，其片状载体浓度为2.14×10〜（11）cm〜（-2）。此外，我们通过掺杂n型4H-SiC的表面并通过铝掺杂来产生pn结。 pn结具有整流特性，其开/关比约为7十年，理想系数为1.15。该技术是用于SiC的强候选局部掺杂技术之一。

著录项

  • 来源
    《Japanese journal of applied physics》 |2014年第6s期|06JF03.1-06JF03.4|共4页
  • 作者

    Daichi Marui; Akihiro Ikeda; Koji Nishi; Hiroshi Ikenoue; Tanemasa Asano;

  • 作者单位

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

    Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号