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首页> 外文期刊>Japanese journal of applied physics >Growth and Electronic Structure Studies of Metal Intercalated Transition Metal Dichalcogenides M_xNbSe_2 (M: Fe and Cu)
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Growth and Electronic Structure Studies of Metal Intercalated Transition Metal Dichalcogenides M_xNbSe_2 (M: Fe and Cu)

机译：金属插层过渡金属双硫属元素化物M_xNbSe_2（M：Fe和Cu）的生长和电子结构研究

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摘要

There has been renewed interest in transition metal dichalcogenides (TMDs) as electronic materials. The modification of the electronic structures of TMDs by means of metal intercalation would be of interest in that respect. With this motivation, we have synthesized and performed angle-resolved photoemission studies on Fe- and Cu-intercalated TMD Fe_xNbSe_2 and Cu_xNbSe_2 with various x values. Fe_xNbSe_2 (x = 0,0.25) and Cu_xNbSe_2 (x = 0,0.06) were grown by the iodine vapor transport method. Intercalation and doping were confirmed by changes in c-axis lattice constant and electronic structure, respectively. A significant amount of electron doping from Fe and Cu was observed, as indicated in the ARPES data measured as the rigid downshift of bands. In addition, band folding was observed in Fe_xNbSe_2, for which the unit cell is doubled owing to the Fe order. However, the extra band folding expected from the antiferromagnetic order of Fe was not observed.
机译：人们对电子材料过渡金属二卤化物（TMDs）产生了新的兴趣。在这方面，通过金属嵌入对TMD的电子结构进行修改将是令人感兴趣的。以此动机，我们已经合成并进行了角度分辨光发射研究，研究了在Fe和Cu插入的TMD Fe_xNbSe_2和Cu_xNbSe_2具有不同的x值。 Fe_xNbSe_2（x = 0,0.25）和Cu_xNbSe_2（x = 0,0.06）通过碘蒸气传输法生长。插层和掺杂分别通过c轴晶格常数和电子结构的变化来确认。如ARPES数据所示，观察到大量的铁和铜电子掺杂，以谱带的刚性下移表示。另外，在Fe_xNbSe_2中观察到带折叠，由于Fe有序，其单位晶胞倍增。然而，未观察到从铁的反铁磁序预期的额外带折叠。

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  • 来源
    《Japanese journal of applied physics》 |2013年第10issue2期|10MC15.1-10MC15.4|共4页
  • 作者

    Yoonyoung Koh; Soohyun Cho; Joon Lee; Le-Xian Yang; Yan Zhang; Cheng He; Fei Chen; Dong-Lai Feng; Masashi Arita; Kenya Shimada; Hirofumi Namatame; Masaki Taniguchi; Changyoung Kim;

  • 作者单位

    Department of Physics, Yonsei University, Seoul 120-749, Korea;

    Department of Physics, Yonsei University, Seoul 120-749, Korea;

    Sangmoon High School, Seoul 137-849, Korea;

    Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Advanced Materials Laboratory,Fudan University, Shanghai 200433, P. R. China;

    Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Advanced Materials Laboratory,Fudan University, Shanghai 200433, P. R. China;

    Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Advanced Materials Laboratory,Fudan University, Shanghai 200433, P. R. China;

    Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Advanced Materials Laboratory,Fudan University, Shanghai 200433, P. R. China;

    Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Advanced Materials Laboratory,Fudan University, Shanghai 200433, P. R. China;

    Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashihiroshima, Hiroshima 739-004, Japan;

    Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashihiroshima, Hiroshima 739-004, Japan;

    Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashihiroshima, Hiroshima 739-004, Japan;

    Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashihiroshima, Hiroshima 739-004, Japan;

    Department of Physics, Yonsei University, Seoul 120-749, Korea;

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