Characteristics of Sub-50nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths

著录项

• 来源
  《Japanese journal of applied physics》 |2013年第11issue2期|11NA06.1-11NA06.4|共4页
• 作者

  Chin-Rung Yan; Jone F. Chen; Ya-Jui Lee; Wei-Shiang Huang; Meng-Ju Huang; Chih-Yuan Chen; Ying-Chia Lin; Kuei-Fen Chang; Huei-Haurng Chen;

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• 作者单位

  Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;

  Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;

  Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan;

  Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan;

  Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan;

  Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan;

  Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan;

  Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan;

  Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan;

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• 原文格式 PDF
• 正文语种 eng
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