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首页> 外文期刊>Japanese journal of applied physics >A 2.8 μm Pixel-Pitch 55 ke~- Full-Well Capacity Global-Shutter Complementary Metal Oxide Semiconductor Image Sensor Using Lateral Overflow Integration Capacitor
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A 2.8 μm Pixel-Pitch 55 ke~- Full-Well Capacity Global-Shutter Complementary Metal Oxide Semiconductor Image Sensor Using Lateral Overflow Integration Capacitor

机译：使用横向溢出集成电容器的2.8μm像素间距55 ke〜-全容量全局快门互补金属氧化物半导体图像传感器

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摘要

In this paper, a global-shutter complementary metal oxide semiconductor (CMOS) image sensor using lateral overflow integration capacitor (LOFIC) in each pixel without trade-offs between full-well capacity (FWC) and dark current and between FWC and pixel size has been demonstrated. Because the FWC is determined only by LOFIC, a photodiode (PD) and storage diffusion capacitor (SD) are designed focusing on achieving low dark current performance especially. A 2.8 μm pixel pitch Bayer-RGB color CMOS image sensor with the pinned diffusion capacitor for the storage node was fabricated and achieved both 83.3 e~-/s at the PD and 58.3 e~-/s at the SD dark current at 60 ℃ and about 55 ke~- full well capacity. A high resolution performance, a high FWC performance and a low dark current performance were simultaneously achieved in this image sensor.
机译：在本文中，一个全局快门互补金属氧化物半导体（CMOS）图像传感器在每个像素中使用横向溢出积分电容器（LOFIC），而在全阱容量（FWC）和暗电流之间以及FWC和像素尺寸之间没有权衡取舍被证明。由于FWC仅由LOFIC决定，因此光电二极管（PD）和存储扩散电容器（SD）的设计重点在于实现低暗电流性能。制作了具有用于存储节点的固定扩散电容器的2.8μm像素间距的Bayer-RGB彩色CMOS图像传感器，在60℃的PD暗电流下达到83.3 e〜-/ s，在SD暗电流下达到58.3 e〜-/ s约55 ke〜-的全产能。在该图像传感器中同时实现了高分辨率性能，高FWC性能和低暗电流性能。

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  • 来源
    《Japanese journal of applied physics》 |2013年第4issue2期|04CE01.1-04CE01.5|共5页
  • 作者

    Shin Sakai; Yoshiaki Tashiro; Rihito Kuroda; Shigetoshi Sugawa;

  • 作者单位

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

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