...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Raman Temperature Measurements of Copper Phthalocyanine Layer of Organic Light-Emitting Diode Using Bandwidth-Temperature Relationship
【24h】

Raman Temperature Measurements of Copper Phthalocyanine Layer of Organic Light-Emitting Diode Using Bandwidth-Temperature Relationship

机译：利用带宽-温度关系测量有机发光二极管铜酞菁层的拉曼温度

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have estimated the temperature of a buried copper phthalocyanine (CuPc) layer in an organic light-emitting diode with the glass/indium-tin-oxide (ITO)/CuPc/N,N'-di-1-naphthaleyl-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD)/tris(8-quinolinolato)aluminum(lll) (Alq_3)/LiF-AI structure from the full width at half-maximum (FWHM) of a Raman band at around 1528 cm~(-1). The FWHMs of the band were measured at temperatures in the range from 25 to 200 ℃. A linear equation was obtained from the observed data by the least-squares method. We estimated the temperature of the CuPc layer in an operating organic light-emitting diode at current densities from 100 to 1000mA/cm~2 using this relationship. The highest temperature was 148±4°C at a current density of 1000mA/cm~2.
机译：我们用玻璃/氧化铟锡（ITO）/ CuPc / N，N'-di-1-萘基-N，N估算了有机发光二极管中埋入的酞菁铜（CuPc）层的温度'-二苯基-1,1'-联苯基-4,4'-二胺（NPD）/三（8-喹啉基）铝（III）（Alq_3）/ LiF-AI结构从半峰全宽（FWHM）开始1528 cm〜（-1）左右的拉曼光谱带。在25至200℃的温度下测量了乐队的FWHMs。通过最小二乘法从观测数据获得线性方程。利用这种关系，我们估算了在工作电流为100至1000mA / cm〜2的有机发光二极管中CuPc层的温度。最高温度为148±4°C，电流密度为1000mA / cm〜2。

著录项

  • 来源
    《Japanese journal of applied physics》 |2013年第5issue2期|05DC16.1-05DC16.3|共3页
  • 作者

    Ryota Iwasaki; Masaki Hirose; Yukio Furukawa;

  • 作者单位

    Department of Chemistry and Biochemistry, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

    Department of Chemistry and Biochemistry, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

    Department of Chemistry and Biochemistry, School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号