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首页> 外文期刊>Japanese journal of applied physics >Mechanical Integrity of Flexible In-Zn-Sn-0 Film for Flexible Transparent Electrode
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Mechanical Integrity of Flexible In-Zn-Sn-0 Film for Flexible Transparent Electrode

机译：柔性透明电极用In-Zn-Sn-0柔性膜的机械完整性

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摘要

The mechanical integrity of transparent In-Zn-Sn-0 (IZTO) films is investigated using outer/inner bending, stretching, and twisting tests. Amorphous IZTO films are grown using a pulsed DC magnetron sputtering system with an IZTO target on a polyimide substrate at room temperature. Changes in the optical and electrical properties of IZTO films depend on the oxygen partial pressure applied during the film deposition process. In the case of 3% oxygen partial pressure, the IZTO films exhibit s resistivity of 8.3 × 10~(-4) Ω cm and an optical transmittance of 86%. The outer bending test shows that the critical bending radius decreases from 10 to 7.5 mm when the oxygen partial pressure is increased from 1 to 3%. The inner bending test reveals that the critical bending radius of all IZTO films is 3.5 mm regardless of oxygen partial pressure. The IZTO films also show excellent mechanical reliability in the bending fatigue tests of more than 10,000 cycles. In the uniaxial stretching tests, the electrical resistance of the IZTO film does not change until a strain of 2.4% is reached. The twisting tests demonstrate that the electrical resistance of IZTO films remains unchanged up to 25°. These results suggest that IZTO films have excellent mechanical durability and flexibility in comparison with already reported crystallized indium tin oxide (ITO) films.
机译：使用外部/内部弯曲，拉伸和扭曲测试研究了透明In-Zn-Sn-0（IZTO）薄膜的机械完整性。非晶态IZTO薄膜是使用脉冲直流磁控溅射系统在室温下将IZTO靶材放在聚酰亚胺基板上生长的。 IZTO薄膜的光学和电学性质的变化取决于在薄膜沉积过程中施加的氧气分压。在氧分压为3％的情况下，IZTO膜的电阻率为8.3×10〜（-4）Ωcm，透光率为86％。外部弯曲试验表明，当氧分压从1％增加到3％时，临界弯曲半径从10减小到7.5 mm。内部弯曲测试表明，无论氧气分压如何，所有IZTO薄膜的临界弯曲半径均为3.5 mm。 IZTO膜在超过10,000次循环的弯曲疲劳测试中也显示出出色的机械可靠性。在单轴拉伸试验中，直到达到2.4％的应变，IZTO膜的电阻才会改变。扭曲测试表明，IZTO薄膜的电阻在25°以下仍保持不变。这些结果表明，与已经报道的结晶铟锡氧化物（ITO）薄膜相比，IZTO薄膜具有出色的机械耐久性和柔韧性。

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  • 来源
    《Japanese journal of applied physics》 |2013年第5issue2期|05DA17.1-05DA17.7|共7页
  • 作者

    Young Sung Kim; Se-In Oh; Sung-Hoon Choa;

  • 作者单位

    Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea;

    Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea;

    Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea;

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