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首页> 外文期刊>Japanese journal of applied physics >Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n~+-Source/Drain on a Selectively Etched GaN
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Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n~+-Source/Drain on a Selectively Etched GaN

机译：n〜+-源极/漏极再生的GaN金属氧化物半导体场效应晶体管在刻蚀GaN上的性能

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摘要

We proposed and fabricated normally off GaN MOSFETs with an epitaxially regrown n~+ GaN source/drain after a short period of dry etching on a sapphire substrate. The regrown S/D MOSFET after dry etching (MOSFET A) exhibited enhanced performance in terms of current drivability and access resistance compared with the same MOSFET without the surface etching before the regrowth (MOSFET B). While MOSFET A has a saturation drain current of 10mA/mm at V_G = 8 V, a field-effect mobility of 22 cm~2 V~(-1) s~(-1), and a series resistance R_(SD) of 0.57kΩ, MOSFET B has 3 mA/mm, 12 cm~2 V~(-1) s~(-1), and 0.93 kΩ, respectively. The electrical characteristic of MOSFET A was also much more improved than that of MOSFET B at low temperatures. Mobility degradation at low temperatures was related to the effect of impurity scattering caused by crystal defects generated during the metal organic chemical vapor deposition (MOCVD) growth.
机译：我们在蓝宝石衬底上进行了短时间的干蚀刻之后，提出并制造了具有外延生长的n〜+ GaN源极/漏极的GaN MOSFET。与没有在再生长之前进行表面蚀刻的相同MOSFET相比，干法蚀刻后的再生长S / D MOSFET（MOSFET A）在电流驱动性和访问电阻方面表现出增强的性能。 MOSFET A在V_G = 8 V时具有10mA / mm的饱和漏极电流，场效应迁移率为22 cm〜2 V〜（-1）s〜（-1），串联电阻R_（SD）为MOSFET B为0.57kΩ，具有3 mA / mm，12 cm〜2 V〜（-1）s〜（-1）和0.93kΩ。 MOSFET A的电特性在低温下也比MOSFET B的电特性有很大改善。低温下的迁移率降低与金属有机化学气相沉积（MOCVD）生长过程中产生的晶体缺陷引起的杂质散射效应有关。

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  • 来源
    《Japanese journal of applied physics》 |2013年第6issue1期|061001.1-061001.5|共5页
  • 作者

    Do-Kywn Kim; Dong-Seok Kim; Sung-Jae Chang; Chang-Ju Lee; Youngho Bae; Sorin Cristoloveanu; Jung-Hee Lee; Sung-Ho Hahm;

  • 作者单位

    School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;

    School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;

    IMEP-LAHC, Grenoble Institute of Technology, Minatec, BP 257, 38016 Grenoble Cedex 1, France;

    School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;

    Department of Electronic Engineering, Uiduk University, Gyeongju 780-713, Korea;

    IMEP-LAHC, Grenoble Institute of Technology, Minatec, BP 257, 38016 Grenoble Cedex 1, France;

    School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;

    School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;

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