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首页> 外文期刊>Japanese journal of applied physics >Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments
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Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments

机译：通过限制导电丝的形成来改善电阻变化随机存取存储器的开关电压的可再现性

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摘要

Resistance change random access memory (ReRAM) has been expected to be a next generation non-volatile memory. However, poor reproducibility of threshold voltage at which the dramatic change of the resistivity occurs hinders the practical application. We have attempted to improve the reproducibility of switching voltages using anodic porous alumina whose nanoholes are quite useful to restrict the filament forming area on the basis of the filament model. In this study, we have reported the pore size and film properties dependences of the variation width of the switching voltages. Two kinds of oxide films prepared by oxalic and sulfuric acids with two different anodic times were used as the insulating layer. Contrary to our expectation, just the sulfuric samples indicate good improvement about the switching voltages. Considering that the size of the effective contact area is not enough small against the filament size, the changing the film properties seems to be important for the suppressing the variation of switching voltages.
机译：电阻变化随机存取存储器（ReRAM）有望成为下一代非易失性存储器。然而，阈值电压的再现性差，在该阈值电压下发生电阻率的急剧变化会阻碍实际应用。我们已经尝试使用阳极多孔氧化铝来改善开关电压的再现性，该阳极多孔氧化铝的纳米孔在细丝模型的基础上对于限制细丝形成区域非常有用。在这项研究中，我们已经报道了孔径和膜特性与开关电压变化宽度的关系。由草酸和硫酸以两种不同的阳极时间制备的两种氧化物膜用作绝缘层。与我们的预期相反，仅含硫的样品表明开关电压有很好的改善。考虑到有效接触区域的尺寸相对于灯丝尺寸而言还不够小，因此改变膜的性质对于抑制开关电压的变化似乎很重要。

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  • 来源
    《Japanese journal of applied physics》 |2013年第6issue2期|06GF07.1-06GF07.4|共4页
  • 作者

    Saeko Furuya; Shintaro Otsuka; Tomohiro Shimizu; Shouso Shingubara; Tadataka Watanabe; Yoshiki Takano; Kouichi Takase;

  • 作者单位

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan;

    Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan;

    Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

    College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan;

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