Water Trapping at the Graphene/Al_2O_3 Interface

Sung Beom Cho; Sangho Lee; Yong-Chae Chung

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Water Trapping at the Graphene/Al_2O_3 Interface

机译：石墨烯/ Al_2O_3界面处的水陷阱

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We investigated the effects of trapped water at the graphene/Al_2O_3 interface using density functional theory. We found that molecularly trapped water does not induce serious interbanding at the Dirac point. However, dissociatively trapped water induces serious interbanding at the Dirac point because of the band alignment induced by the local field of the hydroxyl groups. These findings indicate that trapped water at the graphene/ Al_2O_3 interface can have a significant effect on the electronic structure of graphene.

机译：我们使用密度泛函理论研究了石墨烯/ Al_2O_3界面处截留水的影响。我们发现分子捕获的水不会在狄拉克点引起严重的交织。然而，由于羟基的局部场引起的能带排列，离解性截留的水在狄拉克点处引起严重的相互缠结。这些发现表明，在石墨烯/ Al_2O_3界面处截留的水可能对石墨烯的电子结构产生重大影响。

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《Japanese journal of applied physics》 |2013年第6issue2期|06GD09.1-06GD09.4|共4页
作者
Sung Beom Cho; Sangho Lee; Yong-Chae Chung;
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Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;

Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;

Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea;

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3. Interface trap characterization of AlN/GaN heterostructure with Al_2O_3, HfO_2, and HfO_2/Al_2O_3 dielectrics [J] . Hogyoung Kim, Hee Ju Yun, Seok Choi, Evolving Systems . 2019,第3期

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Water Trapping at the Graphene/Al_2O_3 Interface

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