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Injection-Activated Defect-Governed Recombination Rate in InN

机译：InN中注入激活的缺陷控制的复合率

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摘要

Excess carrier dynamics was investigated by free-carrier absorption and light-induced transient grating techniques in InN layers with residual electron density varying from n_0 = 1.4 × 10~(18) to 4.7 × 10~(18)cm～3 in a wide excitation range (up to 10~(20)cm~(-3)). Carrier lifetime t decreased with injected carrier density ΔN ≥ n_0 and followed the same inverse relationship as on residual electron density τα [B(n_0 + ΔN)]~(-1), thus confirming defect-related recombination mechanism. Its nonradiative origin was verified by r(7～) measurements and ascribed to injection-enhanced nonlinear recombination via defect-assisted Auger recombination with C_(taar) = B/N_r = (4.5 ±2) × 10~(-28)cm~6/s, assuming the defect densityN_r being equal to electron density. Oxygen or hydrogen impurities are proposed as possible candidates for traps assisting in Auger process.
机译：利用自由载流子吸收和光诱导瞬态光栅技术研究了在宽激发条件下InN层中剩余电子密度在n_0 = 1.4×10〜（18）至4.7×10〜（18）cm〜3之间变化的过量载流子动力学。范围（最大10〜（20）cm〜（-3））。载流子寿命t随着注入的载流子密度ΔN≥n_0而降低，并且遵循与残余电子密度τα[B（n_0 +ΔN）]〜（-1）相同的反比关系，从而证实了与缺陷有关的重组机制。通过r（7〜）测量验证了其非辐射起源，并归因于通过缺陷辅助俄歇复合法（C_（taar）= B / N_r =（4.5±2）×10〜（-28）cm〜）进行注入增强的非线性复合。假设缺陷密度N_r等于电子密度，则为6 / s。氧或氢杂质被提议为协助俄歇过程的阱的候选物。

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  • 来源
    《Japanese journal of applied physics》 |2013年第8issue2期|08JD02.1-08JD02.4|共4页
  • 作者

    Saulius Nargelas; Kestutis Jarasiunas; Mikas Vengris; Egidijus Sakalauskas; Tomohiro Yamaguchi; Yasushi Nanishi;

  • 作者单位

    Institute of Applied Research, Vilnius University, 10222 Vilnius, Lithuania;

    Institute of Applied Research, Vilnius University, 10222 Vilnius, Lithuania;

    Laser Research Center, Vilnius University, 10223 Vilnius, Lithuania;

    Institut fuer Physik, Technische Universitaet Ilmenau, PF100565, 98684 Ilmenau, Germany;

    Department of Photonics, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan;

    Department of Photonics, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan;

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