Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

Noriyuki Watanabe; Haruki Yokoyama; Naoteru Shigekawa

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Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

机译：观察GaN / AlGaN / GaN中的负差分电阻：使用极化的可能的隧穿结

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We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure.

机译：我们报告了通过金属有机化学气相沉积法生长的n型GaN /未掺杂的InGaN /未掺杂的GaN /未掺杂的AlGaN / n型GaN二极管中的异常电流-电压行为。未掺杂的GaN /未掺杂的AlGaN / n型GaN（GAG）结构的隧道结状能带分布是通过自发和压电极化效应形成的。我们观察到具有GAG结构的二极管的负差电阻（NDR）行为。 NDR行为表明可能由GAG结构组成的隧道结。

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《Japanese journal of applied physics》 |2013年第8issue2期|08JN03.1-08JN03.3|共3页
作者
Noriyuki Watanabe; Haruki Yokoyama; Naoteru Shigekawa;
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NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;

NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;

Graduate School of Engineering, Osaka City University, Osaka 588-8585, Japan;

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Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

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