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首页> 外文期刊>Japanese journal of applied physics >Highly Transparent Conducting Polymer Top Contacts for Future Ill-Nitride Based Single Photon Emitters
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Highly Transparent Conducting Polymer Top Contacts for Future Ill-Nitride Based Single Photon Emitters

机译：高度透明的导电聚合物顶部触点，用于未来基于氮化物的单光子发射极

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摘要

In this paper we report on a simple conductive polymer based contacting technology for Ill-nitride based nanostructures with respect to the electrical operation within the telecommunication wavelength range. Singularly addressable InN/GaN pyramidal nanostructures were selectively grown by metalorganic vapour phase epitaxy (MOVPE) and subsequently integrated into a high-frequency device layout for future ultrafast electro-optical operation. The employment of the p-conducting polymer poly(3,4-ethylenedioxythiophene)-pory(styrene sulfonate) (PEDOT:PSS) is found to increase the light transmittance up to 89% at a wavelength of 1550 nm compared to 72% in the case of a conventional Ni/Au thin layer top contact. DC measurements using a quasi operation mode for 1000 h reveal no degradation and only a moderate increase of the dark currents. Thus, conducting polymer technology shows tremendous potential for future highly efficient and reliable room temperature operation of nitride based single photon emitters (SPEs).
机译：在本文中，我们报告了一种关于基于氮化铝的纳米结构的基于导电聚合物的简单接触技术，该技术涉及电信波长范围内的电操作。可通过金属有机气相外延（MOVPE）选择性生长可单寻址的InN / GaN金字塔形纳米结构，然后将其集成到高频器件布局中，以用于未来的超快电光操作。发现使用p导电聚合物聚（3,4-乙撑二氧噻吩）-多孔（苯乙烯磺酸盐）（PEDOT：PSS）可以将在1550 nm波长下的透光率提高到89％，而在1550 nm时为72％。常规Ni / Au薄层顶部接触的情况。使用准运行模式进行1000小时的直流测量不会发现衰减，暗电流只会适度增加。因此，导电聚合物技术在氮化物基单光子发射器（SPE）的未来高效，可靠的室温操作中显示出巨大潜力。

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  • 来源
    《Japanese journal of applied physics》 |2013年第8issue2期|08JH10.1-08JH10.4|共4页
  • 作者

    Sally Riess; Martin Mikulics; Andreas Winden; Roman Adam; Michel Marso; Detlev Grutzmacher; Hilde Hardtdegen;

  • 作者单位

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany,JARA-Fundamentals of Future Information Technology, Germany;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany,JARA-Fundamentals of Future Information Technology, Germany;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany,JARA-Fundamentals of Future Information Technology, Germany;

    JARA-Fundamentals of Future Information Technology, Germany,Peter Gruenberg Institute (PGI-6), Forschungszentrum Juelich, 52425 Juelich, Germany;

    Faculte des Sciences, de la Technologie et de la Communication, Universite du Luxembourg, 1359 Luxembourg;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany,JARA-Fundamentals of Future Information Technology, Germany;

    Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich, Germany,JARA-Fundamentals of Future Information Technology, Germany;

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