Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts

Kenji Shiojima; Toshifumi Takahashi; Naoki Kaneda; Tomoyoshi Mishima; Kazuki Nomoto

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Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts

机译：p型GaN肖特基接触中的电感耦合等离子体刻蚀效应

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The effects of inductively coupled plasma (ICP) etching damage on the electrical characteristics of low-Mg-doped p-GaN Schottky contacts were evaluated. The ICP etching greatly reduced the memory effect in the current-voltage characteristics and the difference between the depletion layer capacitances before and after forward current injection. These reductions indicate that acceptor-type interfacial defects were passivated by H atoms during ICP etching. Additionally, photoresponse (PR) measurements revealed that Schottky barrier height was increased from 2.08 to 2.63 eV by the etching. Because of the surface state change, the Fermi level position would be moved toward the conduction band edge slightly by the etching. After annealing, the memory effect and the capacitance change were partially restored, and the PR spectra showed less variation. Absorbed H atoms on the p-GaN surface might be released by annealing.

机译：评估了电感耦合等离子体（ICP）蚀刻损伤对低Mg掺杂p-GaN肖特基接触的电特性的影响。 ICP蚀刻大大降低了电流-电压特性以及正向电流注入前后耗尽层电容之间的差异的存储效应。这些减少表明在ICP蚀刻期间，H原子钝化了受体型界面缺陷。此外，光响应（PR）测量表明，通过蚀刻，肖特基势垒高度从2.08增至2.63 eV。由于表面状态的变化，费米能级位置将通过蚀刻稍微移向导带边缘。退火后，记忆效应和电容变化得以部分恢复，PR谱变化较小。 p-GaN表面上吸收的H原子可能会通过退火释放。

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《Japanese journal of applied physics》 |2013年第8issue2期|08JJ08.1-08JJ08.4|共4页
作者
Kenji Shiojima; Toshifumi Takahashi; Naoki Kaneda; Tomoyoshi Mishima; Kazuki Nomoto;
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Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan;

Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan;

Research and Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan;

Research and Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan;

University of Notre Dame, Notre Dame, IN 46556, U.S.A.;

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1. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching [J] . Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Japanese journal of applied physics . 2021,第SB期

机译：蚀刻诱导的掺杂P型GaN的抗损伤及其通过低偏压电感耦合等离子体反应离子蚀刻的抑制
2. Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching [J] . A. Baharin, R.S. Pinto, U.K. Mishra, Thin Solid Films . 2011,第11期

机译：使用极低功率的电感耦合等离子体刻蚀，低电阻率接触等离子体刻蚀的掺Mg GaN
3. Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis [J] . Kuo-Chin HUANG, Wen-How LAN, Kai Feng HUANG Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第1期

机译：肖特基电流传输分析研究电感耦合等离子体反应离子刻蚀引起的GaN缺陷
4. Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN [C] . 2010 Conference on Optoelectronic and Microelectronic Materials and Devices . 2010

机译：低功率电感耦合等离子体蚀刻对p-GaN欧姆接触的影响
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics [O] . Yue Sun, Xuanwu Kang, Yingkui Zheng, 2020

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7. Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts [O] . Shiojima Kenji, Takahashi Toshifumi, Kaneda Naoki, 2013

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Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts

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