...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Improvement of Reliability Characteristics of TiO_2-Based Resistive Switching Memory Device with an Inserted ZnO Layer
【24h】

Improvement of Reliability Characteristics of TiO_2-Based Resistive Switching Memory Device with an Inserted ZnO Layer

机译：具有插入的ZnO层的TiO_2基电阻开关存储器件的可靠性特性的改善

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

TiO_2-based resistive switching memory devices with an inserted ZnO layer were fabricated, and the effect of inserting a ZnO layer between the TiO_2 and bottom electrode on the reliability characteristics of TiO_2-based memory devices was investigated. The improved endurance and retention performances were achieved in the TiO_2-based memory device fabricated with an inserted ZnO layer. The mechanism of reliability improvement was discussed. The inserted ZnO layer is proposed to adjust the distribution of oxygen vacancies across the TiO_2 layer due to the lower formation energy of oxygen vacancy in ZnO, which may be responsible for the improved reliability characteristics in the TiO_2-based memory device with an inserted ZnO layer.
机译：制备了具有插入的ZnO层的基于TiO_2的电阻式开关存储器件，并研究了在TiO_2和底部电极之间插入ZnO层对基于TiO_2的存储器件的可靠性特性的影响。在具有插入的ZnO层的TiO_2基存储器件中实现了提高的耐久性和保留性能。讨论了可靠性提高的机制。提出插入的ZnO层是为了调整Zn_2中氧空位的形成能较低，从而调整整个TiO_2层上的氧空位的分布，这可能是由于ZnO插入的TiO_2基存储器件的可靠性得到了改善。 。

著录项

  • 来源
    《Japanese journal of applied physics》 |2012年第10issue1期|101101.1-101101.4|共4页
  • 作者

    Lifeng Liu; Di Yu; Bing Chen; Feifei Zhang; Bin Gao; Boyang Li; Dedong Han; Jinfeng Kang; Xing Zhang;

  • 作者单位

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

    Institute of Microelectronics, Peking University, Beijing 100871, China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号