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Waveguide Two-Point Differential-Excitation Method for Quantitative Absorption Measurements of Nanostructures

机译：波导两点微分激励法用于纳米结构的定量吸收测量

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摘要

To establish a new useful quantitative absorption measurement method for nanostructures, we investigated quantitative accuracy of a recently developed waveguide two-point differential-excitation method, which combines Fabry-Perot fringe analysis and attenuated internal emission analysis for differential-path-length excitations. Quantitative absorption spectra of an 8-nm-thick GaAs quantum well at various temperatures consistent with theoretical predictions are demonstrated within 5% relative accuracy and a high dynamic range of 0-21 Ocm~(-1) in modal absorptions. The results were also compared with conventional photoluminescence excitation spectra of the same sample, which turned out to underestimate the absorption peak intensity of the lowest exciton at low temperatures.
机译：为了建立一种新的有用的用于纳米结构的定量吸收测量方法，我们研究了最近开发的波导两点差分激励方法的定量精度，该方法结合了Fabry-Perot条纹分析和衰减内部发射分析以用于差分路径长度激励。在模态吸收中，在5％的相对准确度和0-21 Ocm〜（-1）的高动态范围内，证明了8 nm厚的GaAs量子阱在各种温度下的定量吸收光谱与理论预测一致。还将结果与同一样品的常规光致发光激发光谱进行了比较，结果发现该样品低估了最低激子在低温下的吸收峰强度。

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  • 来源
    《Japanese journal of applied physics》 |2012年第10issue1期|106601.1-106601.5|共5页
  • 作者

    Toshimitsu Mochizuki; Masahiro Yoshita; Shun Maruyama; Changsu Kim; Keisuke Fukuda; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West;

  • 作者单位

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A.;

    Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A.;

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