Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory

Yong-Sik Park; Gyu-Hyun Kil; Yun-Heub Song

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Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory

机译：使用肖特基势垒的自旋传递转矩磁性随机存取存储器双向两端子切换装置

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We present a bidirectional two-terminal switching device using a Schottky barrier for spin-transfer-torque magnetic random access memory (STT-MRAM), which is composed of a Schottky barrier contact with a metal/semiconductor/metal (M/S/M) structure. The proposed M/S/M switching device provides a bidirectional current flow sufficient to write STT-MRAM using a punch through with an extended depletion region at a junction under a reverse bias of M/S or S/M. In addition, a high on-off ratio of 105 is confirmed under the read condition, which is acceptable for the operation of STT-MRAM. From this work, it is expected that an M/S/M structure with bilateral Schottky junctions will be a promising switch device for STT MRAM beyond 20 nm.

机译：我们提出了一种双向肖特基势垒双向开关器件，用于自旋转移力矩磁性随机存取存储器（STT-MRAM），该器件由与金属/半导体/金属（M / S / M ）结构体。所提出的M / S / M开关装置提供了双向电流，该电流足以在M / S或S / M的反向偏置下使用带有在连接处的扩展耗尽区的穿通来写入STT-MRAM。另外，在读取条件下确认到高的开/关比105，这对于STT-MRAM的操作是可以接受的。通过这项工作，可以预期具有双边肖特基结的M / S / M结构将成为超过20 nm的STT MRAM的有前途的开关器件。

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来源
《Japanese journal of applied physics》 |2012年第10issue1期|106501.1-106501.5|共5页
作者
Yong-Sik Park; Gyu-Hyun Kil; Yun-Heub Song;
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Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea;

Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea;

Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea;

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1. Bidirectional Two-Terminal Switching Device with Metal-Semiconductor-Semiconductor Structures for 4F~2 Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell [J] . Gyu-Hyun Kil, Yun-Heub Song Japanese journal of applied physics . 2013,第7Issue1期

机译：具有金属-半导体-半导体结构的双向双向4端开关装置，用于4F〜2自旋传递转矩磁阻随机存取存储单元
2. Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory [J] . Gyu-Hyun Kil, Hyung-Jun Yang, Gae-Hun Lee, Japanese journal of applied physics . 2012,第4ISSUE2期

机译：非易失性随机存取存储器的双向两端子切换装置
3. Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory [J] . Urmimala Roy, Tanmoy Pramanik, Maxim Tsoi, Journal of Applied Physics . 2013,第22期

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4. Nanoring magnetic tunnel Junction and its application in magnetic random access memory demo devices with spin-polarized current switching (invited) [C] . X. F. Han, Z. C. Wen, H. X. Wei Annual Conference on Magnetism and Magnetic Materials . 2008

机译：纳米磁隧道结及其在磁随机存取存储器演示装置中的应用，具有旋转极化电流切换（邀请）
5. Switching in magnetic memory element of toggle mode magnetoresistive random access memory. [D] . Wang, Shengyuan. 2006

机译：拨动模式磁阻随机存取存储器的磁性存储元件的切换。
6. High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory [O] . Jodi M. Iwata-Harms, Guenole Jan, Huanlong Liu, -1

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7. Origin of the Resistance-Area-Product Dependence of Spin-Transfer-Torque Switching in Perpendicular Magnetic Random-Access Memory Cells [O] . G. Mihajlović, N. Smith, T. Santos, 2020

机译：垂直磁随机存取存储器单元中自旋转移扭矩切换的旋转区域 - 产品依赖性的原点

Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory

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