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Improved Electronic Properties of Laser-Doped Emitters by Reducing Surface Roughness

机译:通过降低表面粗糙度来改善激光掺杂发射极的电子性能

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摘要

Laser doping (LD) can help form emitters at low cost and in high throughput because it operates in air atmosphere and at room temperature. Moreover, LD makes high-efficiency structures in a very simple way by melting and diffusing impurities on selective areas. In this study, evaluation of the relationship between multicrystalline silicon (mc-Si) surface conditions and electric properties is carried out. The results show that the surface electric properties were improved and conversion efficiencies were increased. This was accomplished by changing the surface conditions from rough to smooth by surface etching and vacuum treatment before LD.
机译:激光掺杂(LD)可以在空气中和室温下工作,因此可以以低成本和高通量帮助形成发射器。此外,LD通过在选定区域上熔化和扩散杂质,以非常简单的方式制造高效结构。在这项研究中,对多晶硅(mc-Si)表面条件和电性能之间的关系进行了评估。结果表明,提高了表面电性能并提高了转化效率。这是通过在LD之前通过表面蚀刻和真空处理将表面条件从粗糙变为光滑来实现的。

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  • 来源
    《Japanese journal of applied physics》 |2012年第10issue2期|10NA15.1-10NA15.4|共4页
  • 作者单位

    Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan;

    Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan;

    Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan;

    Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan;

    Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan;

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