...
首页> 外文期刊>Japanese journal of applied physics >Record Efficiency on Large Area P-Type Czochralski Silicon Substrates
【24h】

Record Efficiency on Large Area P-Type Czochralski Silicon Substrates

机译:大面积P型直拉硅衬底上的创纪录效率

获取原文
获取原文并翻译 | 示例
           

摘要

In this work we report a world record independently confirmed efficiency of 19.4% for a large area p-type Czochralski grown solar cell fabricated with a full area aluminium back surface field. This is achieved using the laser doped selective emitter solar cell technology on an industrial screen print production line with the addition of laser doping and light induced plating equipment. The use of a modified diffusion process is explored in which the emitter is diffused to a sheet resistance of 90 Ω/□ and subsequent etch back of the emitter to 120 Ω/□. This results in a lower surface concentration of phosphorus compared to that of emitters diffused directly to 120Ω/□. This modified diffusion process subsequently reduces the conductivity of the surface in relation to that of the heavily diffused laser doped contacts and avoids parasitic plating, resulting an average absolute Increase in efficiency of 0.4% compared to cells fabricated without an emitter etch back process.
机译:在这项工作中,我们报告了一个世界纪录,该纪录独立确认的效率是使用全面积铝背面场制造的大面积p型Czochralski生长的太阳能电池的效率。这是通过在工业丝网印刷生产线上使用激光掺杂的选择性发射极太阳能电池技术,加上激光掺杂和光感应电镀设备来实现的。探索了使用改良的扩散工艺的方法,其中将发射极扩散到90Ω/□的薄层电阻,然后将发射极回蚀到120Ω/□。与直接扩散到120Ω/□的发射极相比,磷的表面浓度更低。相对于高度扩散的激光掺杂触点,这种改进的扩散工艺随后降低了表面的电导率,并避免了寄生镀层,与未采用发射极回蚀工艺制造的电池相比,平均效率平均提高了0.4%。

著录项

  • 来源
    《Japanese journal of applied physics》 |2012年第10issue2期|10NA08.1-10NA08.4|共4页
  • 作者单位

    School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Kensington NSW 2052, Australia;

    School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Kensington NSW 2052, Australia;

    Solar Cell R&D Division, Shinsung Solar Energy, Seongnam, Gyeonggi 463-420, Korea;

    Solar Cell R&D Division, Shinsung Solar Energy, Seongnam, Gyeonggi 463-420, Korea;

    Solar Cell R&D Division, Shinsung Solar Energy, Seongnam, Gyeonggi 463-420, Korea;

    Solar Cell R&D Division, Shinsung Solar Energy, Seongnam, Gyeonggi 463-420, Korea;

    Solar Cell R&D Division, Shinsung Solar Energy, Seongnam, Gyeonggi 463-420, Korea;

    Solar Cell R&D Division, Shinsung Solar Energy, Seongnam, Gyeonggi 463-420, Korea;

    Solar Cell R&D Division, Shinsung Solar Energy, Seongnam, Gyeonggi 463-420, Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号