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机译:研究SiO_2基体中嵌入的硅纳米线太阳能电池性能的数值方法
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan,PRESTO, JST, Kawaguchi, Saitama 332-0012, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan,Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan,Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;
机译:嵌入在SiO_2抗反射涂层中的二维铟纳米粒子对硅太阳能电池性能的等离子效应
机译:具有改进性能的新型掩埋接触式硅纳米线太阳能电池制造方法
机译:PECVD氮化硅基体中嵌入硅纳米晶体的硅太阳能电池效率提高
机译:量子尺寸效应对嵌入SiO_2的硅纳米线阵列太阳能电池性能的影响
机译:研究CZ-硅中B-O缺陷的形成-解离及其对太阳能电池性能的影响。
机译:取决于气体性能的碳纳米管-硅纳米线异质结太阳能电池及其在自供电NO2检测中的应用
机译:CZ-硅生产从太阳能级和再循环材料。第二部分:研究由太阳能级CZ-硅生产的太阳能电池的性能