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Numerical Approach to the Investigation of Performance of Silicon Nanowire Solar Cells Embedded in a SiO_2 Matrix

机译:研究SiO_2基体中嵌入的硅纳米线太阳能电池性能的数值方法

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摘要

The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (E_g = 1.9 eV)-type SiNWs embedded in a SiO_2-type hydrogenated amorphous silicon oxide (Wg = 1.9eV) structure have been investigated using two- and three-dimensional device simulators, taking into account the quantum size effect. The average bandgap of a SiNW embedded in SiO_2 increased from 1.15 to 2.68 eV with decreasing diameter from 10 to 2nm, owing to the quantum size effect. Note that under sunlight of AM1.5G, the open-circuit voltage (V_(oc)) of SiNW solar cells also increased to 1.46 V with decreasing diameter of the SiNWs to 2 nm. This result suggests that it is possible to enhance V_(oc) by applying the quantum size effect, and a SiNW is a promising material for all-silicon tandem solar cells.
机译:具有嵌入SiO_2 / n型氢化非晶硅氧化物(Wg = 1.9eV)结构的p型氢化非晶硅氧化物(E_g = 1.9 eV)/ n型SiNWs的硅纳米线(SiNW)太阳能电池的电特性具有考虑到量子尺寸效应,我们使用二维和三维设备模拟器进行了研究。由于量子尺寸效应,嵌入SiO_2中的SiNW的平均带隙从1.15eV增加到2.68eV,直径从10nm减小到2nm。请注意,在AM1.5G的日光下,SiNW太阳能电池的开路电压(V_(oc))也随SiNWs的直径减小到2 nm而增加到1.46V。该结果表明,可以通过应用量子尺寸效应来提高V_(oc),并且SiNW是用于全硅串联太阳能电池的有前途的材料。

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  • 来源
    《Japanese journal of applied physics》 |2012年第11issue2期|11PE12.1-11PE12.4|共4页
  • 作者单位

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan,PRESTO, JST, Kawaguchi, Saitama 332-0012, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan,Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan,Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;

    Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;

    Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan;

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