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首页> 外文期刊>Japanese journal of applied physics >Complementary Circuit with Self-Alignment Organic/Oxide Thin-Film Transistors
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Complementary Circuit with Self-Alignment Organic/Oxide Thin-Film Transistors

机译：具有自对准有机/氧化物薄膜晶体管的互补电路

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Complementary logic circuits with self-alignment organic/oxide thin-film transistors (TFTs) were investigated. The layout and process steps of a self-alignment bottom-contact-type organic TFT and a top-contact type oxide TFT with a common layout pattern of the gate, source, and drain electrodes were proposed, and an integrated circuit was realized. The estimated field-effect mobilities, threshold voltages, and on-off ratios of the organic and oxide TFTs were 0.16 and 2.2 cm2 V~1 s~1, 2.2 and 2 V, and 3 × 10~3 and 5.2 × 10~6, respectively. From the complementary inverter characteristics, the voltage gain was 13 and the logic swing was 9.8 V at an applied voltage of 10 V. From the switching characteristics of the inverter, the rise and fall times were 18 and 46 us, respectively. The operations of the NAND and NOR logic circuit configurations were confirmed, and the maximum operational frequency of NAND logic was estimated to be over 100 kHz. © 2012 The Japan Society of Applied Physics
机译：研究了具有自对准有机/氧化物薄膜晶体管（TFT）的互补逻辑电路。提出了具有栅极，源极和漏极的共同布局图案的自对准底接触型有机TFT和顶接触型氧化物TFT的布局和工艺步骤，并实现了集成电路。有机和氧化物TFT的估计场效应迁移率，阈值电压以及开关比分别为0.16和2.2 cm2 V〜1 s〜1、2.2和2 V，3×10〜3和5.2×10〜6 ， 分别。根据互补的逆变器特性，在施加10 V电压时，电压增益为13，逻辑摆幅为9.8V。根据逆变器的开关特性，上升时间和下降时间分别为18 us和46 us。确认了NAND​​和NOR逻辑电路配置的操作，并且NAND逻辑的最大工作频率估计超过100 kHz。 ©2012日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2012年第2issue1期|p.021604.1-021604.5|共5页
  • 作者

    Fumio Takeda; Ryuichi Sato; Shigeki Naka; Hiroyuki Okada;

  • 作者单位

    Graduate School of Science & Engineering, University of Toyama, Toyama 930-8555, Japan;

    Graduate School of Science & Engineering, University of Toyama, Toyama 930-8555, Japan;

    Graduate School of Science & Engineering, University of Toyama, Toyama 930-8555, Japan;

    Graduate School of Science & Engineering, University of Toyama, Toyama 930-8555, Japan,Center for Research and Development in Natural Sciences, University of Toyama, Toyama 930-8555, Japan;

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