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机译:金属碳纳米管中形成的势垒高度的估计
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan Venture Business Laboratory, Nagoya University, Nagoya 464-8601, Japan;
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
机译:金属单壁碳纳米管量子点中隧道势垒高度的表征和估计
机译:肖特基势垒高度对Pd-碳纳米管接触的碳纳米管直径的依赖性
机译:羧基官能化单壁碳纳米管对孔雀石绿色染料基有机装置界面屏障高度的影响
机译:金属半导体碳纳米管接触势垒高度的局部变化
机译:吸附在硅(100)表面的碳纳米管的理论研究,以及金属碳纳米管电导率调制的探索。
机译:高效环形金属和金属的分类形成通过通用Pickering的半导体单壁碳纳米管乳化液
机译:高性能半导体富集碳纳米管薄膜 晶体管使用金属碳纳米管电极
机译:金属电极和半导体碳纳米管结合氧化的肖特基势垒调制模型