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Estimation of Height of Barrier Formed in Metallic Carbon Nanotube

机译:金属碳纳米管中形成的势垒高度的估计

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摘要

We have estimated the height of barriers against carriers formed in the metallic carbon nanotube (m-CNT) grown by plasma-enhanced chemical vapor deposition. The result shows that the heights of the barriers against both electrons and holes are about 300 meV. The existence of the barrier in the m-CNT was confirmed by local current modulation using scanning gate microscopy and by the potential drop obtained by Kelvin probe force microscopy.
机译:我们已经估计了对通过等离子体增强化学气相沉积法生长的金属碳纳米管(m-CNT)中形成的载流子的势垒高度。结果表明,针对电子和空穴的势垒的高度约为300 meV。通过使用扫描门显微镜的局部电流调制以及通过开尔文探针力显微镜获得的电势下降,证实了m-CNT中势垒的存在。

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  • 来源
    《Japanese journal of applied physics》 |2012年第2issue2期|p.02BN01.1-02BN01.4|共4页
  • 作者单位

    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan Venture Business Laboratory, Nagoya University, Nagoya 464-8601, Japan;

    Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

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