Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum

Hideki Imaeda; Satoshi Ishii; Shigeru Kishimoto; Yutaka Ohno; Takashi Mizutani

首页> 外文期刊>Japanese journal of applied physics >Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum

【24h】

Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum

机译：真空中具有Au触点的碳纳米管场效应晶体管中n型导电的观察

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The change in the conduction type of carbon nanotube field-effect transistors (CNT-FETs) with Au contacts from p-type to n-type by annealing in vacuum was observed. The result was explained by the local work function change of the Au contacts based on the measurement of the surface potential of the Au/CNT contact by Kelvin probe force microscopy (KFM). This work function change became prominent due to the desorption of oxygen by annealing. The degree of the conduction-type change was found to be dependent on the devices. The CNT-FETs with small OFF current showed clear conduction-type change. However, the devices with large OFF current did not show clear conduction-type change. This device dependent behavior was explained by the energy gap difference among devices, in which suppression of OFF current is not sufficient for the devices with thick CNTs with small bandgap.

机译：通过真空退火，观察到具有Au触点的碳纳米管场效应晶体管（CNT-FET）的导电类型从p型变为n型的变化。结果是通过基于开尔文探针力显微镜（KFM）对Au / CNT触点表面电势的测量得出的，Au触点的局部功函数发生了变化。由于退火引起的氧的解吸，该功函数的变化变得显着。发现导电类型变化的程度取决于器件。关闭电流小的CNT-FET表现出明显的导电类型变化。然而，具有大OFF电流的器件没有显示出明显的导电类型变化。器件之间的能隙差异解释了这种与器件有关的行为，其中对于具有较窄带隙的厚CNT的器件，截止电流的抑制是不够的。

著录项

来源
《Japanese journal of applied physics》 |2012年第2issue2期|p.02BN06.1-02BN06.4|共4页
作者
Hideki Imaeda; Satoshi Ishii; Shigeru Kishimoto; Yutaka Ohno; Takashi Mizutani;
展开▼
作者单位

Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan;

Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan;

Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan;

Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan;

Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Y-Contacted High-Performance n-Type Single-Walled Carbon Nanotube Field-Effect Transistors: Scaling and Comparison with Sc-Contacted Devices [J] . Ding L, Wang S, Zhang ZY, Nano letters . 2009,第12期

机译：Y接触高性能n型单壁碳纳米管场效应晶体管：定标和与Sc接触器件的比较
2. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts [J] . Javey A, Tu R, Farmer DB, Nano letters . 2005,第2期

机译：具有化学掺杂触点的高性能n型碳纳米管场效应晶体管
3. n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes [J] . Yosuke Nosho, Yutaka Ohno, Shigeru Kishimoto, Applied Physics Letters . 2005,第7期

机译：Ca接触电极制备的n型碳纳米管场效应晶体管
4. Electrical characteristics of the carbon nanotube field-effect transistors with extended contacts obtained within ab-initio based model [C] . Fediai Artem, Ryndyk Dmitry /A/., Cuniberti Gianaurelio Institute of Electrical and Electronics Engineers International Conference on Electronics and Nanotechnology . 2015

机译：在基于ab-initio的模型中获得的具有扩展触点的碳纳米管场效应晶体管的电特性
5. Synthesis of single-walled carbon nanotubes and characterization of nanotube-based field-effect transistors. [D] . Kim, Woong. 2005

机译：单壁碳纳米管的合成和基于纳米管的场效应晶体管的表征。
6. Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts [O] . Sang-Hyeok Cho, Kwanghee Cho, No-Won Park, 2017

机译：具有低电阻金欧姆接触的多层SnSe纳米片状场效应晶体管
7. Fabrication of n-type carbon nanotube field-effect transistors by Al doping [O] . Oh H, Kim JJ, Song W, 2014

机译：Al掺杂制备n型碳纳米管场效应晶体管

Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum

摘要

著录项

相似文献

相关主题

期刊订阅