Dynamic-Carrier-Distribution-Based Compact Modeling of p-i-n Diode Reverse Recovery Effects

Junichi Nakashima; Masataka Miyake; Mitiko Miura-Mattausch

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Dynamic-Carrier-Distribution-Based Compact Modeling of p-i-n Diode Reverse Recovery Effects

机译：基于动态载流子分布的p-i-n二极管反向恢复效应的紧凑建模

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This paper presents a compact model of the diode reverse recovery effect for the simulation program with integrated circuit emphasis (SPICE) simulation. We found that the reverse recovery effect can be described with the dynamic carrier distribution within the lightly-doped N~ drift layer of a p-i-n power diode. The proposed model is verified with two-dimensional (2D) device simulation results and compared with a lumped-charge-based conventional model.

机译：本文针对带有集成电路重点（SPICE）仿真的仿真程序，提供了二极管反向恢复效应的紧凑模型。我们发现反向恢复效果可以用p-i-n功率二极管的轻掺杂N〜漂移层内的动态载流子分布来描述。该模型通过二维（2D）器件仿真结果进行了验证，并与基于集总电荷的常规模型进行了比较。

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《Japanese journal of applied physics》 |2012年第2issue2期|p.02BP06.1-02BP06.4|共4页
作者
Junichi Nakashima; Masataka Miyake; Mitiko Miura-Mattausch;
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Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

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1. Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions [J] . Masataka MIYAKE, Junichi NAKASHIMA, Mitiko MIURA-MATTAUSCH IEICE Transactions on Electronics . 2012,第10期

机译：p-i-n二极管反向恢复效应的紧凑模型对低电流密度和高电流密度条件均有效
2. A Voltage Model of p-i-n Diodes at Reverse Recovery Under Short-Time Freewheeling [J] . Yifei Luo, Fei Xiao, Bo Wang, IEEE Transactions on Power Electronics . 2017,第1期

机译：短时续流下反向恢复时p-i-n二极管的电压模型
3. Online High-Power p-i-n Diode Junction Temperature Extraction With Reverse Recovery Fall Storage Charge [J] . Haoze Luo, Yuxiang Chen, Wuhua Li, IEEE Transactions on Power Electronics . 2017,第4期

机译：具有反向恢复功能的在线大功率p-i-n二极管结温度提取秋季存储电荷
4. Compact modeling of the diode reverse recovery effect for leading developments of power electronic applications [C] . Miyake Masataka, Matsuura Kai, Ueno Akifumi IEEE International Conference on ASIC . 2013

机译：二极管反向恢复效应的紧凑模型，用于电力电子应用的领先发展
5. Physical modeling of variable -lifetime P-I-N diodes and of two-dimensional effects in insulated gate bipolar transistors (IGBTs) [D] . Lu, Liqing 2006

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6. Customisable X-ray fluorescence photodetector with submicron sensitivity using a ring array of silicon p-i-n diodes [O] . Phil S. Yoon -1

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7. Physics-Based Mixed-Mode Reverse Recovery Modeling And Optimization Of Si PiN And MPS Fast Recovery Diodes [O] . Cappelluti Federica, Bonani Fabrizio, Furno M., 2006

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8. Modeling and Analysis of Thyristor and Diode Reverse Recovery In Railgun Pulsed Power Circuits. [R] . Bernardes, J., Swindler, S. 2005

机译：铁路脉冲电源电路中晶闸管和二极管反向恢复的建模与分析。

Dynamic-Carrier-Distribution-Based Compact Modeling of p-i-n Diode Reverse Recovery Effects

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