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首页> 外文期刊>Japanese journal of applied physics >The Effects of Substrate Surface Treatments on Growth of a-Plane GaN Single Crystals Using Na Flux Method
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The Effects of Substrate Surface Treatments on Growth of a-Plane GaN Single Crystals Using Na Flux Method

机译：Na通量法衬底表面处理对a型GaN单晶生长的影响

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摘要

Nonpolar GaN substrates are necessary for the improvement of GaN device performance. The growth of high-quality nonpolar GaN crystals, however, has not yet been achieved. In this study, we grew a-plane GaN crystals using the Na flux method and investigated the effects of the substrate surface treatment on the crystallinity of grown GaN crystals. A-plane GaN substrates with chemical mechanical polishing (CMP) and with chemical etching using pyrophosphoric acid were used as the seed substrates. We found that full width at the half-maximum (FWHM) of the X-ray rocking curve (XRC) of GaN crystals grown on the substrate with chemical etching was smaller than that on the substrate with CMP. The results show that chemical etching is more effective than CMP for improving the crystallinity of a-plane GaN crystals.
机译：非极性GaN衬底对于提高GaN器件性能是必需的。然而，尚未实现高质量非极性GaN晶体的生长。在这项研究中，我们使用Na助熔剂法生长了a面GaN晶体，并研究了衬底表面处理对生长的GaN晶体结晶度的影响。具有化学机械抛光（CMP）和使用焦磷酸进行化学蚀刻的A面GaN衬底被用作种子衬底。我们发现，化学蚀刻在衬底上生长的GaN晶体的X射线摇摆曲线（XRC）的半峰全宽（FWHM）小于CMP衬底上的全宽。结果表明，化学蚀刻比CMP更有效地改善了a面GaN晶体的结晶度。

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  • 来源
    《Japanese journal of applied physics》 |2012年第3issue1期|p.035501.1-035501.4|共4页
  • 作者

    Keiko Masumoto; Kosuke Murakami; Hiroki Imabayashi; Hideo Takazawa; Yuma Todoroki; Daisuke Matsuo; Akira Kitamoto; Mihoko Maruyama; Mamoru Imade; Masashi Yoshimura; Yasuo Kitaoka; Takatomo Sasaki; Yusuke Mori;

  • 作者单位

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

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